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Electrical Contacts to Metastable GexSi1−x Using Pd2Si as a Transport Layer

Published online by Cambridge University Press:  25 February 2011

Richard G. Purser
Affiliation:
Department of Materials Science and Engineering Cornell University, Ithaca, NY 14853
Jay W. Strane
Affiliation:
Department of Materials Science and Engineering Cornell University, Ithaca, NY 14853
James W. Mayer
Affiliation:
Department of Materials Science and Engineering Cornell University, Ithaca, NY 14853
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Abstract

The transport of germanium through a co-deposited palladium-silicon layer on epitaxially grown GexSi1−x on Si(100) was studied. The Ge concentration in the UHV-CVD grown GexSi1−x film was x=.14 with a thickness of 155 nm. When the co-deposited layer is Pd rich with respect to Pd2Si, Ge was found to move through the Pd-Si layer and grow polycrystalline on the GexSi1−x. Ge transport and Pd2Si(111) grain growth ceased simultaneously. No transport was found for Si rich Pd-Si layers. Electrical characterization showed the contacts were ohmic with a specific contact resistivity between 6–12 μωQ-cm2 and an end resistance of.75 ω, resulting in a carrier concentration under the contact of 1.5×1014 cm−2. Hall effect measurements of the semiconductor gave n=5.77×1014 cm−2 and μ=36.96 cm−2/Vs. The sheet resistance of the contact layer was found to be 23.54 ω/square and the semiconductor was 237 ω/square.

Type
Research Article
Copyright
Copyright © Materials Research Society 1993

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References

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