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Electrical Characterization of N+-implanted n-type ZnO Single Crystals: p-n Homojunction and Deep Level Defects

Published online by Cambridge University Press:  01 February 2011


Qilin Gu
Affiliation:
gump423@gmail.com, The University of Hong Kong, Department of Physics, Room417B, CYM Physics Building,The University of Hong Kong, Hong Kong, N/A, Hong Kong, 852-64356057
Xuemin Dai
Affiliation:
xuemin.dai@gmail.com, The University of Hong Kong, Department of Physics, Hong Kong, N/A, Hong Kong
Chi-Chung Ling
Affiliation:
ccling@hku.hk, The University of Hong Kong, Department of Physics, Hong Kong, N/A, Hong Kong
Shijie Xu
Affiliation:
sjxu@hkucc.hku.hk, The University of Hong Kong, Department of Physics, Hong Kong, N/A, Hong Kong
Liwu Lu
Affiliation:
lwlu46@sohu.com, The University of Hong Kong, Department of Physics, Hong Kong, N/A, Hong Kong
Gerhard Brauer
Affiliation:
G.Brauer@fzd.de, Forschungszentrum Dresden-Rossendorf, Institut f¨¹r Ionenstrahlphysik und Materialforschung, Dresden, 01314, Germany
Wolfgang Anwand
Affiliation:
w.anwand@fzd.de, Forschungszentrum Dresden-Rossendorf, Institut f¨¹r Ionenstrahlphysik und Materialforschung, Dresden, 01314, Germany
Wolfgang Skorupa
Affiliation:
W.Skorupa@fzd.de, Forschungszentrum Dresden-Rossendorf, Institut f¨¹r Ionenstrahlphysik und Materialforschung, Dresden, 01314, Germany

Abstract

Unintentionally doped n-type ZnO single crystals were implanted by nitrogen ions with different fluences of 1013, 1014 and 1015 cm−2 respectively. ZnO p-n homojunction was successfully fabricated due to the formation of p-type layer after 650°C post-implantation annealing in air for 30 minutes. Further thermal evolution of deep level defects was studied through thermal annealing up to 1200°C. Electrical characterization techniques including current-voltage (I-V), capacitance-voltage (C-V), Deep Level Transient Spectroscopy (DLTS) and double-correlation DLTS (DDLTS) were used for investigating the control sample, all the as-implanted and annealed samples through Au/n-ZnO Schottky diodes as well as ZnO p-n junctions. Detailed electrical properties of fabricated devices and characteristics of implantation induced defects were analyzed based on plentiful DLTS spectra. Moreover, low-temperature photoluminescence experiments of all the as-implanted and annealed samples were performed and the correlation between results from electrical and optical characterizations was discussed.


Type
Research Article
Copyright
Copyright © Materials Research Society 2008

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Electrical Characterization of N+-implanted n-type ZnO Single Crystals: p-n Homojunction and Deep Level Defects
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