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Electrical And Microscopic Investigation Of E-Gun Evaporated Titanium Thin Films

Published online by Cambridge University Press:  14 March 2011

Karl Hofmann
Affiliation:
Institute of Semiconductor Technology II, RWTH Aachen Sommerfeldstr. 24 52074 Aachen, Germany
Martina Luysberg
Affiliation:
Institute of Semiconductor Technology II, RWTH Aachen Sommerfeldstr. 24 52074 Aachen, Germany
Bernd Spangenberg
Affiliation:
Institute of Semiconductor Technology II, RWTH Aachen Sommerfeldstr. 24 52074 Aachen, Germany
Heinrich Kurz
Affiliation:
Institute of Semiconductor Technology II, RWTH Aachen Sommerfeldstr. 24 52074 Aachen, Germany
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Abstract

The deposition rate of titanium films plays a determining role for possible fabrication schemes of metallic SET structures. Depending on this rate the resistivities display a striking difference in their temperature dependence which is attributed to their different crystal structure as analyzed by transmission electron-beam microscopy. In addition a sharp rise in resistivity occurs below a critical thickness in films deposited at slow rates. This sharp increase can be used in combination with a step induced thinning to form tunnel junctions for single electron transistor structures.

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

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References

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