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Effects of the underlayer surface state on the interconnecting aluminum film properties

Published online by Cambridge University Press:  10 February 2011

Sam-Dong Kim
Affiliation:
Memory Research and Development Division, Hyundai Electronics Industries Co., Ltd., Bubal -eub, Ichon -si, Kyoungki -do, Korea, sdakim@hei.co.kr
Chan-Soo Shin
Affiliation:
Memory Research and Development Division, Hyundai Electronics Industries Co., Ltd., Bubal -eub, Ichon -si, Kyoungki -do, Korea, sdakim@hei.co.kr
Noh-Jung Kwak
Affiliation:
Memory Research and Development Division, Hyundai Electronics Industries Co., Ltd., Bubal -eub, Ichon -si, Kyoungki -do, Korea, sdakim@hei.co.kr
Kyeong-Bock Lee
Affiliation:
Memory Research and Development Division, Hyundai Electronics Industries Co., Ltd., Bubal -eub, Ichon -si, Kyoungki -do, Korea, sdakim@hei.co.kr
Cheol-Ho Shin
Affiliation:
Memory Research and Development Division, Hyundai Electronics Industries Co., Ltd., Bubal -eub, Ichon -si, Kyoungki -do, Korea, sdakim@hei.co.kr
Oh-Jung Kwon
Affiliation:
Memory Research and Development Division, Hyundai Electronics Industries Co., Ltd., Bubal -eub, Ichon -si, Kyoungki -do, Korea, sdakim@hei.co.kr
Chung-Tae Kim
Affiliation:
Memory Research and Development Division, Hyundai Electronics Industries Co., Ltd., Bubal -eub, Ichon -si, Kyoungki -do, Korea, sdakim@hei.co.kr
Hong-Seon Yang
Affiliation:
Memory Research and Development Division, Hyundai Electronics Industries Co., Ltd., Bubal -eub, Ichon -si, Kyoungki -do, Korea, sdakim@hei.co.kr
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Abstract

A gradual change in thermal oxide surface state from hydrophilic to hydrophobic was observed with time -delay in a clean room environment. Surface quality and reflectivity for the Al/Ti metal layers showed a strong dependency on the oxide surface state. From the hydrophilic oxide substrate, a lower (002) Ti preferred orientation was obtained than from hydrophobic ones. This resulted in a degraded (111) Al preferred orientation and rough metal surface. The RF-etch process increased the smoothness and hydrophobic surface property for the inter -metal dielectric (IMD) oxides, and therefore greatly improved Al/Ti surface quality. When conventional CMOS double layer metal interconnection process is performed, metal inter-line bridge yield was strongly affected by the surface state of substrate oxides.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

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References

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