Hostname: page-component-8448b6f56d-t5pn6 Total loading time: 0 Render date: 2024-04-23T12:34:01.378Z Has data issue: false hasContentIssue false
  • English
  • Français

Effects of the Dislocation Density and Surface Energy on Phase Diagrams of the S-K Growth Mode for the GaInN/GaN and GaPSb/GaP Systems

Published online by Cambridge University Press:  10 February 2011

K. Nakajima ,
T. Ujihara ,
S. Miyashita  and
G. Sazaki
K. Nakajima
Affiliation:
Institute for Materials Research, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577, JAPAN, nakajima@imr.tohok.ac jp
T. Ujihara
Affiliation:
Institute for Materials Research, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577, JAPAN, nakajima@imr.tohok.ac jp
S. Miyashita
Affiliation:
Institute for Materials Research, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577, JAPAN, nakajima@imr.tohok.ac jp
G. Sazaki
Affiliation:
Institute for Materials Research, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577, JAPAN, nakajima@imr.tohok.ac jp
Get access

Abstract

The growth of thin films has been categorized into three types namely the Frank-van der Merwe (FM) mode, the Stranski-Krastanov (SK) mode, and the Volmer-Weber (VW) mode. The strain, surface, and interfacial energies were calculated for the three types of growth mode of the GaInN/GaN and GaPSb/GaP systems by considering the effects of the dislocation density and reconstruction of dangling bonds. The phase diagrams of the growth modes were determined for the GaInN/GaN and GaPSb/GaP systems. In the GaInN/GaN system, the VW mode appears in the most region of the phase diagram. The region of the VW mode becomes smaller as the dislocation density increases. In the GaPSb/GaP system, the SK and VW modes appear and the region of these modes becomes larger as the reconstruction ratio increases

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 618: Symposium K – Morphological & Compositional Evolution of Heteroepitaxial… , 2000 , 285
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Seifert, W., Carlsson, N., Miller, M., Pistol, M-E., Samuelson, L., and Wallenberg, L. R., Prog. Cryst. Growth and Charact. 33, p. 423 (1996).Google Scholar
2 Nakajima, K., J. Cryst. Growth 203, p. 376 (1999).Google Scholar
3 Nakajima, K., Jpn. J. Appl. Phys. 38, p. 1875 (1999).Google Scholar
4 Nakajima, K., Ujihara, T., Miyashita, S., and Sazaki, G., J. Cryst. Growth 209, p. 637 (2000).Google Scholar
5 Nakajima, K., Kitahara, K., and Ochiai, S., Jpn. J. Appl. Phys. 35, p. 2605 (1996).Google Scholar
6 Brice, J. C., in Series of Monographs on Selected Topics in Solid State Physics, 12, edited by Wohlfarth, E. P. (North-Holland, Amsterdam, 1973), p. 78–127.Google Scholar
7 Stringfellow, G. B., J. Phys. Chem. Solids 34, p. 1749 (1973).Google Scholar
8 Cahn, J. W. and Hilliard, J. E., J. Chem. Phys. 28, p. 258 (1958).Google Scholar
9 Hillert, M., Acta. Metall. 9, p. 525 (1961).Google Scholar