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Effects of Sputtering Power and Annealing Temperature on the Properties of Sc-doped ZnO Thin Films

Published online by Cambridge University Press:  01 February 2011

Ming Hua Shiao
Affiliation:
mhshiao@itrc.org.tw, Instrument Technology Research Center, National Applied Research Laboratories, Planning & Promotion Division, 20 R&D Road VI, Hsinchu Science Park, Hsinchu 300, Taiwan, Hsinchu, N/A, 300, Taiwan, +886-3-5779911 ext. 555, +886-3-5773947
Cheng-Chung Jaing
Affiliation:
ccjaing@must.edu.tw, Ming Hsin University of Science & Technology, Department of Optoelectronic System Engineering, No. 1 Hsin Hsin Road, Hsin Feng, Hsinchu, N/A, 304, Taiwan
Yu-Jia Huang
Affiliation:
080look@yahoo.com.tw, Ming Hsin University of Science & Technology, Department of Electronic Engineering, No. 1 Hsin Hsin Road, Hsin Feng, Hsinchu, N/A, 304, Taiwan
Chien-Ying Su
Affiliation:
sujames@itrc.org.tw, Instrument Technology Research Center, National Applied Research Laboratories, Vacuum Technology Division, 20 R&D Road VI, Hsinchu Science Park, Hsinchu, N/A, 300, Taiwan
Chih-Jung Lu
Affiliation:
d9266010@mail.nchu.edu.tw, National Chung Hsing University, Department of Materials Engineering, 250, Kuo Kuang Rd., Taichung, N/A, 402, Taiwan
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Abstract

Sc-doped ZnO thin films were deposited on Corning 1737 glasses by using RF magnetron co-sputtering system with Sc2O3 and ZnO targets. Different sputtering powers of Sc2O3 target and post annealing of 550°C for 2 hr were investigated to understand the effect on microstructural, optical and electrical properties of Sc-doped ZnO thin films. From X-ray diffraction (XRD) results, the Sc-doped films have (002) preferred orientation. Cross-sectional scanning electron microscope (SEM) show that the Sc-doped ZnO thin films have columnar structure before and after annealing procedure. Atomic force microscopy (AFM) surface measurement also shows that the surface roughness of the films was smoother when the Sc2O3 sputtering power increased. The optical transmission of as deposited Sc-doped films in the visible region all exceeded 80%, and increased about 3% after samples annealed. Electrical resistivity measurement reveals that the as-deposited Sc-doped ZnO thin films had lowest resistivity of 0.97 Ω cm when the Sc2O3 sputtering power was 125W. After annealing the lowest resistivity decreased to 9.85 × 10−2 Ω cm in which 200W of the Sc2O3 sputtering power was applied.

Type
Research Article
Copyright
Copyright © Materials Research Society 2006

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