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Effects of Nitrogen Doping in the Insulational Character of Anodically Oxidized Films of Tantalum

Published online by Cambridge University Press:  15 February 2011

Y. Nakamura
Affiliation:
Materials Research & Analysis Center, Corporate R&D Group, Sharp Corporation, Tenri, Nara 632, Japan
T. Yamamoto
Affiliation:
Liquid Crystal Group, Corporate R&D Group, Sharp Corporation, Tenri, Nara 632, Japan
Y. Okamoto
Affiliation:
Materials Research & Analysis Center, Corporate R&D Group, Sharp Corporation, Tenri, Nara 632, Japan
H. Morimoto
Affiliation:
Liquid Crystal Group, Corporate R&D Group, Sharp Corporation, Tenri, Nara 632, Japan
Y. Akagi
Affiliation:
Materials Research & Analysis Center, Corporate R&D Group, Sharp Corporation, Tenri, Nara 632, Japan
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Abstract

The effects of nitrogen doping as a terminator in an anodically oxidized film of tantalum have been investigated.

In the oxide film of nitrogen-free tantalum, the electric leakage current abruptly increased with the applied voltage. It is well-known as the Poole-Frenkel effect [1] [2]. After annealing at 623K in a hydrogen atmosphere, the leakage current increased.

On the other hand, in the oxidized films of nitrogen-doped tantalum the leakage current increased in proportion to the applied voltage, but it was very small as compared with the nitrogen-free oxide. Moreover the leakage current decreased after annealing. The decrement strongly depended on the amount of doped nitrogen.

Type
Research Article
Copyright
Copyright © Materials Research Society 1994

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References

[1] Shinriki, H., Hiratani, M., Nakao, A. and Tachi, S. in Extended Abstracts of the 1991 International Conference on Solid State Devices and Materials, Yokohama, 1991, p.198.Google Scholar
[2] Young, P.L., J. Appl. Phys., 42 (1), 235, (1976)CrossRefGoogle Scholar
[3] Simmons, J.G., Phys. Rev., 155 (3), 657. (1967)CrossRefGoogle Scholar
[4] Simmons, R.T., Morzenh, P.T., Smyth, D.M. and Gerstenberg, D., Thin Solid Films, 23, 75, (1974)CrossRefGoogle Scholar

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Effects of Nitrogen Doping in the Insulational Character of Anodically Oxidized Films of Tantalum
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