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The Effects of Cu on Field Aided Lateral Crystallization (FALC) of Amorphous Silicon (a-Si) Films

Published online by Cambridge University Press:  17 March 2011

Jae-Bok Lee
Affiliation:
Department of Ceramic Engineering, Hanyang University 17 Haengdang-dong, Seongdong-ku, Seoul 133-791, KOREA
Chul-Ho Kim
Affiliation:
Department of Ceramic Engineering, Hanyang University 17 Haengdang-dong, Seongdong-ku, Seoul 133-791, KOREA
Se-Youl Kwon
Affiliation:
Department of Ceramic Engineering, Hanyang University 17 Haengdang-dong, Seongdong-ku, Seoul 133-791, KOREA
Duck-Kyun Choi
Affiliation:
Department of Ceramic Engineering, Hanyang University 17 Haengdang-dong, Seongdong-ku, Seoul 133-791, KOREA
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Abstract

A novel concept of field aided lateral crystallization (FALC) and the effects of Cu on FALC of amorphous silicon (a-Si) were investigated. Cu was found to induce the lateral crystallization toward a metal-free region as well as the crystallization of a-Si in contact with Cu. In particular, the lateral crystallization caused by Cu was noticeably accelerated at the negative electrode side in every pattern with an aid of electric field, while it was retarded at the positive electrode side. The occurrence of Cu-FALC phenomenon was interpreted in terms of dominant diffusing species (DDS) in the reaction between metal and Si. The FALC velocity increased with the applied field intensity and the annealing temperature. The crystallization of a-Si was achieved at temperatures as low as 375°C when the annealing time increased in the presence of high electric field, above 30V/cm. Therefore, we could demonstrate the possibility of low temperature (<500°C) polycrystalline silicon (poly-Si) crystallization using Cu as a mediator in FALC technology.

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

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