Skip to main content Accessibility help
×
Home
Hostname: page-component-559fc8cf4f-67gxp Total loading time: 0.215 Render date: 2021-03-02T05:50:17.839Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "metricsAbstractViews": false, "figures": false, "newCiteModal": false, "newCitedByModal": true }

Effect of Wettability of Poly Silicon on CMP Behavior

Published online by Cambridge University Press:  01 February 2011

Young-Jae Kang
Affiliation:
k1515f@hanmail.net, Hanyang University, Metallurgy & Materials Eng., 1271 Sa-1dong, Sangrok-gu,, Ansan, 426-791, Korea, Republic of
Bong-Kyun Kang
Affiliation:
brown81@hanyang.ac.kr, Hanyang University, Metallurgy & Materials Eng., 1271 Sa-1dong, Sangrok-gu,, Ansan, 426-791, Korea, Republic of
In-Kwon Kim
Affiliation:
dokman@hanmail.net, Hanyang University, Metallurgy & Materials Eng., 1271 Sa-1dong, Sangrok-gu,, Ansan, 426-791, Korea, Republic of
Jin-Goo Park
Affiliation:
jgpark@hanyang.ac.kr, Hanyang University, Metallurgy & Materials Eng., 1271 Sa-1dong, Sangrok-gu,, Ansan, 426-791, Korea, Republic of
Yi-Koan Hong
Affiliation:
jhonny@chollian.net, Samsung Electronics, Process Development, Memory Division, Device Solution Network, San #16, Banwol-Dong, Hwasung, 445-701, Korea, Republic of
Sang-Yeob Han
Affiliation:
sangyeob78.han@samsung.com, Samsung Electronics, Process Development, Memory Division, Device Solution Network, San #16, Banwol-Dong, Hwasung, 445-701, Korea, Republic of
Seong-Kyu Yun
Affiliation:
wine.yun@samsung.com, Samsung Electronics, Process Development, Memory Division, Device Solution Network, San #16, Banwol-Dong, Hwasung, 445-701, Korea, Republic of
Bo-Un Yoon
Affiliation:
b.yoon@samsung.com, Samsung Electronics, Process Development, Memory Division, Device Solution Network, San #16, Banwol-Dong, Hwasung, 445-701, Korea, Republic of
Chang-Ki Hong
Affiliation:
ck.hong@samsung.com, Samsung Electronics, Process Development, Memory Division, Device Solution Network, San #16, Banwol-Dong, Hwasung, 445-701, Korea, Republic of
Get access

Abstract

The hydrophobicity of poly Si is reported to introduce different polishing behavior with careful control of post CMP cleaning process. The purpose of this study was to investigate the effect of poly Si wettability on its CMP behavior. The adhesion force of polymeric particle on the poly Si wafer surfaces was measured in the KOH solution (pH 11) as a function of solution A concentration. Adhesion force decreased and saturated as a function of concentration of solution A. The change of surface wettability affects not only the polishing rates but also the level of contamination on wafer because the interactions between particles and substrates are dependent on the wettability of the surface. Also, hydrophobic poly Si surfaces attracted much more pad particles with water marks than hydrophilic

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below.

References

1. Lee, J. D, Park, Y. R., Yoon, B. U., Han, Y. P., Hah, S. R, Moon, J. T., J. Electrochem. Soc., 149 (8) G477–G481 (2002)CrossRefGoogle Scholar
2. Yassen, A. A., Mourlas, N. J., Mehregany, M., J. Electrochem. Soc., 144 (1) 237242 (1997)CrossRefGoogle Scholar
3. Chen, H. R., , C, , Gau, Dai, B. T., Tsai, M. S., Sensors and Actuators A 108 8690 (2003)CrossRefGoogle Scholar
4. Kim, K. N. et al. ,, Symposium on VLSI Technology Digest of Technical Paper, p. 1617, (1998)Google Scholar
5. Freitas, A. M. and Sharma, M. M., J. Colloid. Interface. Sci., 233, 73 (2001)CrossRefGoogle Scholar
6. Park, J. G. and Pas, M. F., J. Electrochem. Soc. 142, 6 (1995)Google Scholar

Full text views

Full text views reflects PDF downloads, PDFs sent to Google Drive, Dropbox and Kindle and HTML full text views.

Total number of HTML views: 0
Total number of PDF views: 15 *
View data table for this chart

* Views captured on Cambridge Core between September 2016 - 2nd March 2021. This data will be updated every 24 hours.

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Effect of Wettability of Poly Silicon on CMP Behavior
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

Effect of Wettability of Poly Silicon on CMP Behavior
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

Effect of Wettability of Poly Silicon on CMP Behavior
Available formats
×
×

Reply to: Submit a response


Your details


Conflicting interests

Do you have any conflicting interests? *