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Effect of Stress on field Confinement in Channel Waveguides formed by Defining Si3N4 Ridges on GaALAS Multilayer Structures

Published online by Cambridge University Press:  21 February 2011


Carl J. Radens
Affiliation:
University of Cincinnati, Cincinnati, Ohio 45221
Bahram Roughani
Affiliation:
University of Cincinnati, Cincinnati, Ohio 45221
Howard E. Jackson
Affiliation:
University of Cincinnati, Cincinnati, Ohio 45221
Joseph T. Boyd
Affiliation:
University of Cincinnati, Cincinnati, Ohio 45221
Robert D. Burnham
Affiliation:
Amoco Research Center, Amoco Technology Company, Naperville,Illinois 60566

Abstract

Optical channel waveguiding has been observed in a structure consisting of a silicon nitride ridge on a multilayer GaAlAs heterostructure. The silicon nitride layer was deposited and then patterned to form 3.5 micron wide ridges. The optical field intensity radiating from the endface of the channel waveguide is found to have two peaks symmetric about the center of the silicon nitride ridge. Raman microprobe spectroscopy indicates a significant stress-induced shift in the GaAs longitudinal phonon frequency. Rapid thermal annealing reduces the stress and changes the optical field intensity distribution to a single symmetric peak.


Type
Research Article
Copyright
Copyright © Materials Research Society 1989

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References

1. Radens, C. J., Roughani, B., Jackson, H. E., Boyd, J. T. and Burnham, R. D., IEEE J. Quantum Electron., scheduled for publication May, 1989.Google Scholar
2. Cardona, M., International Conference on Raman and Luminescence Spectroscopy in Technology, (Proceedings SPIE 822, 2, 1987).CrossRefGoogle Scholar
3. Kirby, P. A., Selway, P. R. and Westbrook, L. D., J. Appl. Phys., 50, 4567 (1979).CrossRefGoogle Scholar

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Effect of Stress on field Confinement in Channel Waveguides formed by Defining Si3N4 Ridges on GaALAS Multilayer Structures
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