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Effect Of RTA On TiN Films As The Barrier Layer for Pt/BST/Pt Capacitors Prepared By RF Magnetron Co-sputter Technique At Low Substrate Temperature

Published online by Cambridge University Press:  21 March 2011

Miin-Horng Juang
Affiliation:
Department of Electronics Engineering, National Taiwan University of Science and Technology, Kee-Lung Rd., 106 Taipei, Taiwan, R.O.C.
Chuan-Chou Hwang
Affiliation:
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, 300 Hsinchu, Taiwan, R.O.C.
Huang-Chung Cheng
Affiliation:
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, 300 Hsinchu, Taiwan, R.O.C.
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Abstract

Effect of rapid-thermal-annealing on metallic barrier TiN against the interdiffusions of Ti and Si into BST in Pt/BST/Pt/TiN/Ti/Si capacitors has been studied. In the integration of BST capacitors, the thermal budget of the BST deposition would cause the inter-diffusions of Ti and Si from Ti adhesion layer and Si-plug respectively. This event would degrade the BST capacitors. To address this issue, rapid-thermal-annealed TiN barriers were used between the bottom electrode Pt and adhesion layer Ti. Optimal RTA condition for TiN were found in this experiment. Excellent electrical characteristics of Pt/BST/Pt/TiN/Ti/Si capacitors, including high dielectric constant (εr =320), low leakage current (1.5×10−8 A/cm2) under 0.1 MV/cm, and life time longer than 10 year lifetime under 1.6 MV/cm were obtained with Ar+O2 mixed ambient at a low substrate temperature (300°C).

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

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References

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Effect Of RTA On TiN Films As The Barrier Layer for Pt/BST/Pt Capacitors Prepared By RF Magnetron Co-sputter Technique At Low Substrate Temperature
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