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The effect of processing conditions on the structure of buried interfaces between silicon and silicon dioxide

Published online by Cambridge University Press:  03 September 2012

Xidong Chen
Affiliation:
Department of Physics, University of Illinois at Urbana-Champaign 1110 W. Green St., Urbana, IL 61801.
J. Murray Gibson
Affiliation:
Department of Physics, University of Illinois at Urbana-Champaign 1110 W. Green St., Urbana, IL 61801.
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Abstract

A transmission electron microscope technique is used to image atomic steps at buried interfaces between silicon and silicon dioxide. We have studied the effect of processing conditions on the interfacial structure of Si/SiO2 with this technique. We observed a dramatic effect of post-oxidation annealing on silicon (100). Roughening of Si(111) interfaces due to chemical preparation is also reported.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

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References

1 Hirsch, P., Howie, A., Nicholson, R.B., Pashley, D.W., and Whelan, M.J., Electron Microscopy of Thin Crystals, Robert E. Krieger Publishing Co., INC, Florida, 1977 pp. 158.Google Scholar
2 Chen, X., Gibson, J. M., in preparation for publication.Google Scholar
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8 Chen, X., Gibson, J. M., submitted for publication in Appl. Phys. Lett.Google Scholar

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