Skip to main content Accessibility help

We use cookies to distinguish you from other users and to provide you with a better experience on our websites. Close this message to accept cookies or find out how to manage your cookie settings.

Close cookie message
×
Home
  • Home
Hostname: page-component-559fc8cf4f-28jzs Total loading time: 0.3 Render date: 2021-02-26T18:24:28.720Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "metricsAbstractViews": false, "figures": false, "newCiteModal": false, "newCitedByModal": true }
EnglishFrançais
MRS Online Proceedings Library (OPL) MRS Online Proceedings Library (OPL)

Article contents

Effect of Low-Level Boron Doping on Transport Properties of a-Si:H and a-SiGe:H Alloys

Published online by Cambridge University Press:  25 February 2011

Liyou Yang ,
A. Catalano ,
R. R. Arya ,
M. S. Bennett  and
I. Balberg
Liyou Yang
Affiliation:
Solarex Thin Film Division, 826 Newtown-Yardley Road, Newtown, PA 18940
A. Catalano
Affiliation:
Solarex Thin Film Division, 826 Newtown-Yardley Road, Newtown, PA 18940
R. R. Arya
Affiliation:
Solarex Thin Film Division, 826 Newtown-Yardley Road, Newtown, PA 18940
M. S. Bennett
Affiliation:
Solarex Thin Film Division, 826 Newtown-Yardley Road, Newtown, PA 18940
I. Balberg
Affiliation:
The Racah Institute of Physics, The Hebrew University, Jerusalem, Israel
Get access

Abstract

Large simultaneous changes in ambipolar diffusion length and d.c. photoconductivity are observed with boron doping below 5ppm. We show that the observation can be explained successfully with a model for the doping effect, which is also consistent with earlier studies. The μτ products for both carriers as a function of doping are determined. The light intensity dependence of diffusion length and photoconductivity is also discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 149: Symposium E – Amorphous Silicon Technology - 1989 , 1989 , 563
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below.
If you should have access and can't see this content please contact technical support.

References

1. Haruki, H., Sakai, H., Kamiyawa, M., and Uchida, Y., Solar Energy Mater. 8, 441 (1983).CrossRefGoogle Scholar
2. Moustakas, T.D., Maruska, H.P., Friedman, R., and Hicks, M., Appl. Phys. Lett. 43, 368 (1983).CrossRefGoogle Scholar
3. Catalano, A., Faughnan, B.W., and Moore, A.R., Sol. Energy Mater. 13, 65 (1986).CrossRefGoogle Scholar
4. Street, R.A., Zesch, J. and Thompson, M.J., Appl. Phys. Lett. 43, 672 (1983).CrossRefGoogle Scholar
5. Sakata, I., Ishida, T., Okazaki, S., Saitoh, T., Yamanaka, M., and Hayashi, Y., J. Appl. Phys. 61, 1916 (1987).CrossRefGoogle Scholar
6. Kakinuma, H., Kasuya, Y., Sakamoto, M. and Shibata, S., J. Appl. Phys. 65, 2307 (1989).CrossRefGoogle Scholar
7. Ritter, D., Weiser, K. and Zeldov, E., J. Appl. Phys. 62, 4563 (1987).CrossRefGoogle Scholar
8. Wronski, C.R. and Daniel, R.E., Phys. Rev. B23, 794 (1981).CrossRefGoogle Scholar
9. Persans, P.D., Phil. Mag. B46, 435 (1982).CrossRefGoogle Scholar
10. Pandya, R., Schiff, E.A. and Conrad, K.A., J. Non-Cryst. Solids 66, 193 (1986).CrossRefGoogle Scholar
11. McMahon, T.J. and Crandall, R.S., Proc. of the Int. Topical Conf. on Hydrogenated Amorphous Silicon Devices and Tech., Yorktown Heights, NY to be published.Google Scholar
12. Yang, L. et al., to be published.Google Scholar

Full text views

Full text views reflects PDF downloads, PDFs sent to Google Drive, Dropbox and Kindle and HTML full text views.

Total number of HTML views: 0
Total number of PDF views: 6 *
View data table for this chart

* Views captured on Cambridge Core between September 2016 - 26th February 2021. This data will be updated every 24 hours.

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Effect of Low-Level Boron Doping on Transport Properties of a-Si:H and a-SiGe:H Alloys
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

Effect of Low-Level Boron Doping on Transport Properties of a-Si:H and a-SiGe:H Alloys
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

Effect of Low-Level Boron Doping on Transport Properties of a-Si:H and a-SiGe:H Alloys
Available formats
×
×

Reply to: Submit a response

Your details

Conflicting interests

Do you have any conflicting interests? *