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Effect of La Dopant on Electrical Properties of Pb(Zr,Ti)O3 Thin Film Capacitors

Published online by Cambridge University Press:  10 February 2011

Chang Jung Kim
Affiliation:
Microelectronics Lab, Samsung Advanced Institute of Technology, P.O. Box 11, Suwon, Korea 440–600
Ilsub Chung
Affiliation:
Microelectronics Lab, Samsung Advanced Institute of Technology, P.O. Box 11, Suwon, Korea 440–600
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Abstract

Lanthanum doped lead zirconate titanate (PZT) thin films have been prepared on Pt/IrO2/Ir/SiO2/Si substrates to improve the ferroelectric and retention properties. The microstructure and electrical properties of the PZT capacitors were evaluated as a function of La content. The crystalline orientation was appreciably influenced by the addition of La in PZT thin films. The microstructures of films containing 0 and 0.5 mol% La were single phase perovskite, but for La = 1 mol%, a second phase was detected by SEM observation. The 0.5 mol% La doped PZT thin film capacitor showed the best ferroelectric and retention properties for ferroelectric random access memory compared to non-doped PZT.

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

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