Skip to main content Accessibility help
×
Home
Hostname: page-component-55597f9d44-l69ms Total loading time: 0.218 Render date: 2022-08-14T07:45:10.579Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "useRatesEcommerce": false, "useNewApi": true } hasContentIssue true

Effect of Dopant Concentration on High Voltage 4H-SiC Schottky Diodes

Published online by Cambridge University Press:  01 February 2011

Francesco La Via
Affiliation:
francesco.lavia@imm.cnr.it, CNR-IMM, SiC growth, Stradale Primosole 50, 95121, Catania, N/A, N/A, Italy, ++39 095 5968229, ++39 095 5968312
Giuseppa Galvagno
Affiliation:
ggalvagno@imm.cnr.it, CNR-IMM, Stradale Primosole 50, Catania, N/A, 95121, Italy
Andrea Firrincieli
Affiliation:
afirry@gmail.com, CNR-IMM, Stradale Primosole 50, Catania, N/A, 95121, Italy
Salvatore Di Franco
Affiliation:
salvatore.difranco@imm.cnr.it, CNR-IMM, Stradale Primosole 50, Catania, N/A, 95121, Italy
Andrea Severino
Affiliation:
andrea.severino@imm.cnr.it, CNR-IMM, Stradale Primosole 50, Catania, N/A, 95121, Italy
Stefano Leone
Affiliation:
s.leone@etc-epi.com, Epitaxial Technology Center, BIC Sicilia - Pantano d'Arci, Catania, N/A, 95030, Italy
Marco Mauceri
Affiliation:
m.mauceri@etc-epi.com, Epitaxial Technology Center, BIC Sicilia - Pantano d'Arci, Catania, N/A, 95030, Italy
Giuseppe Pistone
Affiliation:
g.pistone@etc-epi.com, Epitaxial Technology Center, BIC Sicilia - Pantano d'Arci, Catania, N/A, 95030, Italy
Giuseppe Abbondanza
Affiliation:
g.abbondanza@etc-epi.com, Epitaxial Technology Center, BIC Sicilia - Pantano d'Arci, Catania, N/A, 95030, Italy
Ferdinando Portuese
Affiliation:
portuese@tin.it, Epitaxial Technology Center, BIC Sicilia - Pantano d'Arci, Catania, N/A, 95030, Italy
Lucia Calcagno
Affiliation:
lucia.calcagno@ct.infn.it, Catania University, Physics Department, Via S. Sofia 64, Catania, N/A, 95123, Italy
Gaetano Foti
Affiliation:
gaetano.foti@ct.infn.it, Catania University, Physics Department, Via S. Sofia 64, Catania, N/A, 95123, Italy
Get access

Abstract

Practical design of high-voltage SiC Schottky rectifiers requires the understanding of the influence of the epitaxial dopant concentration on the reverse and forward characteristics. This work analyzes the correlation between the dopant concentration and the I-V characteristics of Schottky diodes for a critical concentration range where the leakage current variations are more evident. The details of how high temperatures affect the properties of junctions have been carefully described to obtain further improvement in the future by proper device optimization. Dopant concentration of about 1.2 × 1016 cm-3 gives the best results in reverse characteristics without great losses in forward currents.

Type
Research Article
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Padovani, F. A., Stratton, R.: Solid State Electronics 9, 695 (1966).CrossRefGoogle Scholar
[2] Wang, Y., Ali, G. N., Milkhov, M. K., Vaidyanathan, V., Skromme, B. J., Raghothamachar, B., and Dudley, M., Journal of Applied Physics 97, 013540 (2005).CrossRefGoogle Scholar
[3] Kojima, K., Ohno, T., Fujimoto, T., Katsuno, M., Ohtani, N., Nishio, J., Ishida, Y., Takahashi, T., Suzuki, T., Tanaka, T., and Arai, K., Materials Science Forum 433–436, 925 (2003).CrossRefGoogle Scholar
[4] Via, F. La, Galvagno, G., Roccaforte, F., Ruggiero, A., and Calcagno, L., Appl. Phys. Lett. (accepted for publication).Google Scholar
[5] Weitzel, E., Palmour, J. W., Carter, C. H., Moore, K., Nordquist, K. J., Allen, S., and Thero, C., IEEE Trans. Electron Devices 43, 1732 (1996).CrossRefGoogle Scholar
[6] Spiazzi, G., Buso, S., Citron, M., Pierobon, R., Corradin, M., IEEE Trans. Power El. 18 n.6, 1249 (2003).CrossRefGoogle Scholar

Save article to Kindle

To save this article to your Kindle, first ensure coreplatform@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about saving to your Kindle.

Note you can select to save to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be saved to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Effect of Dopant Concentration on High Voltage 4H-SiC Schottky Diodes
Available formats
×

Save article to Dropbox

To save this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you used this feature, you will be asked to authorise Cambridge Core to connect with your Dropbox account. Find out more about saving content to Dropbox.

Effect of Dopant Concentration on High Voltage 4H-SiC Schottky Diodes
Available formats
×

Save article to Google Drive

To save this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you used this feature, you will be asked to authorise Cambridge Core to connect with your Google Drive account. Find out more about saving content to Google Drive.

Effect of Dopant Concentration on High Voltage 4H-SiC Schottky Diodes
Available formats
×
×

Reply to: Submit a response

Please enter your response.

Your details

Please enter a valid email address.

Conflicting interests

Do you have any conflicting interests? *