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Effect of Calcination Temperature on Interface Properties Between In2O3 and Au Electrode in Micro Gap Semiconductor Gas Sensors

Published online by Cambridge University Press:  01 February 2011


Jun Tamaki
Affiliation:
juntrc@se.ritsumei.ac.jp, Ritsumeikan University, Dept. of Applied Chemistry, 1-1-1 Noji-higashi, Kusatsu-shi, Shiga, 525-8577, Japan, +81-77-561-2862, +81-77-561-2659
Jun Niimi
Affiliation:
rc007007@se.ritsumei.ac.jp, Ritsumeikan University, Dept. of Applied Chemistry, 1-1-1 Noji-higashi, Kusatsu-shi, Shiga, 525-8577, Japan
Satoshi Konishi
Affiliation:
konishi@se.ritsumei.ac.jp, Ritsumeikan University, Dept. of Micro System Technology, 1-1-1 Noji-higashi, Kusatsu-shi, Shiga, 525-8577, Japan

Abstract

The In2O3 thin film nanosensors were fabricated by dropping In(OH)3 sol on nano gap electrode with 0.1-2.5 micron of gap size, dried, and calcined at various temperatures. The grain size of In2O3 and thus the number of In2O3 grains were changed by calcining at 600-850 °C. The size of grain was increased from 15 nm at 600 °C to 55 nm at 850 °C, and thus the number of grains in 0.3 micron gap was decreased from 19 to 5.3. Contrary to the expectation, the small resistance changes to both 1 ppm Cl2 (resistance increase) and 0.5 ppm Cl2 (resistance decrease) were obtained for In2O3 nanosensors calcined at 700-850 °C. These were contributed to the changes in the surface and interface chemical state to suppress the adsorption of or substitution with Cl2 molecule.


Type
Research Article
Copyright
Copyright © Materials Research Society 2006

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References

1 Tamaki, J., Sensor Letters, 3, 89 (2005).CrossRefGoogle Scholar
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Effect of Calcination Temperature on Interface Properties Between In2O3 and Au Electrode in Micro Gap Semiconductor Gas Sensors
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