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Effect of Boron and Phosphorus Ion Implantation on a-SixC1-x:H Thin Films

Published online by Cambridge University Press:  21 February 2011

F. Demichelis
Affiliation:
Dipartimento di Fisica Politecnico, Tormo (Italy)
R. Galloni
Affiliation:
Laboratori CNR-LAMEL, Bologna (Italy)
C. F. Pirri
Affiliation:
Dipartimento di Fisica Politecnico, Tormo (Italy)
R. Rizzolid
Affiliation:
Laboratori CNR-LAMEL, Bologna (Italy)
C. Summonte
Affiliation:
Laboratori CNR-LAMEL, Bologna (Italy)
E. Tresso
Affiliation:
Dipartimento di Fisica Politecnico, Tormo (Italy)
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Abstract

Ion implantation of boron and phosphorus in device quality a-SixC1-x:H films deposited by Ultra High Vacuum Plasma Enhanced Chemical Vapor Deposition (UHV PECVD) has been performed. The effects of damage and of damage recovering after annealing were investigated by optical absorption, electrical conductivity and infrared (IR) spectroscopy measurements. It is found that samples doped by phosphorus implantation can have dark conductivities as high as those obtained on samples doped with boron, either by ion implantation or gas phase.

Type
Research Article
Copyright
Copyright © Materials Research Society 1992

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References

[1] Tawada, Y., Kondo, M., Okamoto, H. and Hamakawa, Y. - Proc. 15th IEEE Photovoltaic Specialist Conference, Florida (IEEE Publ. New York, 1981) p. 245 Google Scholar
[2] Basu, N., Ganguly, G., Ray, S. and Barna, A.K. - Jap. Journ. Appl. Phys. 28, 1776 (1981)CrossRefGoogle Scholar
[3] Hamakawa, Y. and Hokamoto, H. - in “Wide Band-Gap Semiconductors” (Ed. Moustakas, T., Pankove, J., Hamakawa, Y.) Mat. Res. Soc. Symp. Proc, vol. 239, (1992).Google Scholar
[4] Fujimoto, F., Ootuca, A., Komaki, K., Yaata, Y., Ymane, I., Yamashita, H., Hashimoto, Y., Tawada, Y., Nishimura, K., Okamoto, H. and Hamakawa, Y. - Jap. Journ. Appl. Phys. 23, 810 (1984)CrossRefGoogle Scholar
[5] Kuwano, Y. and Tsuda, S. - in “Amorphous and Microcrystalline Silicon Carbide” Springer Proceedings in Physics vol. 34 (Springer Verlag, Berlin, 1989) p. 167 CrossRefGoogle Scholar
[6] Demichelis, F., Pirri, C.F., Tresso, E., DellaMea, G., Rigato, V., Rava, P., Amato, G. - in “Amorphous Silicon Technology” (Ed. Madan, A., Thompson, M. J., Taylor, P. C., LeComber, P. G., Hamakawa, Y.) Mat. Res. Soc. Symp. Proc. vol. 219, 793 (1991)Google Scholar
[7] Fonseca, F., Galloni, R., Larsen, A. Nylandsted - Phil. Mag. B (submitted)Google Scholar
[8] Mahan, A. H., Mascarenhas, A., Williamson, D. L., Crandall, R. S. - in “Amorphous Silicon Technology” (Ed. Madan, A., Thompson, M. J., Taylor, P. C., LeComber, P. G., Hamakawa, Y.) Mat. Res. Soc. Symp. Proc. vol. 118, 641 (1989)Google Scholar
[9] Lucovsky, G., Nemanich, R. J. and Knights, J. C. - Phys. Rev. B 19, 2064 (1988)CrossRefGoogle Scholar

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Effect of Boron and Phosphorus Ion Implantation on a-SixC1-x:H Thin Films
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