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Dynamics of LO phonons in InN studied by subpicosecond time-resolved Raman spectroscopy

Published online by Cambridge University Press:  31 January 2011

Kong-Thon Tsen
Affiliation:
tsen@asu.edu
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Abstract

The phonon dynamics of both the A 1(LO) and the E 1 (LO) phonons in InN has been studied by time-resolved Raman spectroscopy on a subpicosecond time scale. From the temperature-dependence of their lifetimes, we demonstrate that both phonons decay primarily into a large wavevector TO phonon and a large wavevector TA/LA phonon consistent with the accepted phonon dispersion relationship for wurtzite InN. Their lifetimes have been found to decrease from 2.2 ps, at the low electron-hole pair density of5x1017 cm -3 to 0.25 ps, at the highest density of2x1019 cm -3. Our experimental findings demonstrate that carrier-density dependence of LO phonon lifetime is a universal phenomenon in polar semiconductors.

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Research Article
Copyright
Copyright © Materials Research Society 2010

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Dynamics of LO phonons in InN studied by subpicosecond time-resolved Raman spectroscopy
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