Skip to main content Accessibility help
×
Home
Hostname: page-component-559fc8cf4f-d5zgf Total loading time: 0.245 Render date: 2021-03-08T09:32:18.150Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "metricsAbstractViews": false, "figures": false, "newCiteModal": false, "newCitedByModal": true }

Dry Etch Damage in GaAs P-N Junctions

Published online by Cambridge University Press:  26 February 2011

S. J. Pearton
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
F. Ren
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
C. R. Abernathy
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
T. R. Fullowan
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
J. R. Lothian
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
Get access

Abstract

GaAs p-n junction mesa-diode structures were fabricated so that both n- and p-type layers could be simultaneously exposed to either O2 or H2 discharges. This simulates the ion bombardment during plasma etching with either CCl2F2/O2 or CH4/H2 mixtures. The samples were exposed to 1 mTorr discharges for period of 1–20 min with DC biases of -25 to -400V on the cathode. For O2 ion bombardment, the collector resistance showed only minor (≤10%) increases for biases up to -200 V and more rapid increases thereafter. In our structure, this indicates that bombardment-induced point defects penetrate at least 500 Å of GaAs for ion energies of ≥200eV. The base resistance displayed only a minor increase (∼10%) over the pre-exposure value even for O+ ion energies of 375 eV, due to the very high doping (1020 cm−3 ) in the base. More significant increases in both collector and base resistances were observed for hydrogen ion bombardment due to hydrogen passivation effects. We will give details of this behaviour as a function of ion energy, plasma exposure time and post-treatment annealing temperature.

Type
Research Article
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below.

References

1. Abemathy, C. R., Pearton, S. J., Caruso, R., Ren, F. and Kovalchick, J., Appl. Phys. Lett. 55 1750 (1984).CrossRefGoogle Scholar
2. Tokumitsu, E., Kudo, Y., Konagai, M. and Takakashi, K., Jap. J. Appl. Phys. 24 1189 (1985).CrossRefGoogle Scholar
3. Weyers, M., Putz, N., Heinecke, H., Heyen, M., Luth, H. and Balk, P., J. Electron. Mater. 15 57 (1986).CrossRefGoogle Scholar
4. Kim, M. E., Bayraktaroglu, B. and Gupta, A. in HEMTs and HBTs: Devices Fabrication and Circuits, ed. Ali, F. and Gupta, A. (Artech House, Boston, 1991).Google Scholar
5. Nozaki, S., Miyake, R., Yamada, T., Konagai, M. and Takahasti, K., Jap. J. Appl. Phys. 29 L1731 (1990).CrossRefGoogle Scholar
6. SIMS measurements by Evans East, Inc., Plainsboro, NJ 08536.Google Scholar
7. Constantine, C., Johnson, D., Pearton, S. J., Chakrabarti, U. K., Emerson, A. B., Hobson, W. S. and Kinsella, A. P., J. Vac. Sci. Technol. B 8 596 (1990).CrossRefGoogle Scholar
8. Pearton, S. J., Mat. Sci. Reports 4 313 (1990).CrossRefGoogle Scholar
9. Pearton, S. J., Corbett, J. W. and Shi, T. S., Appl. Phys. A 43 153 (1987).CrossRefGoogle Scholar
10. Synman, H. C. and Neethling, T. H., Rad. Eff. 69 199 (1983).CrossRefGoogle Scholar
11. Wang, J. S., Fonash, S. J. and Ashok, S., IEEE Electron Dev. Lett. EDL-4 432 (1983).CrossRefGoogle Scholar
12. Kwan, P., Bhat, K. N., Borrego, J. M. and Ghandi, S. K., Solid-State Electron. 26 125 (1983).CrossRefGoogle Scholar

Full text views

Full text views reflects PDF downloads, PDFs sent to Google Drive, Dropbox and Kindle and HTML full text views.

Total number of HTML views: 0
Total number of PDF views: 5 *
View data table for this chart

* Views captured on Cambridge Core between September 2016 - 8th March 2021. This data will be updated every 24 hours.

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Dry Etch Damage in GaAs P-N Junctions
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

Dry Etch Damage in GaAs P-N Junctions
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

Dry Etch Damage in GaAs P-N Junctions
Available formats
×
×

Reply to: Submit a response


Your details


Conflicting interests

Do you have any conflicting interests? *