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Doping Studies of n-Type CsBi4Te6 Thermoelectric Materials

Published online by Cambridge University Press:  01 February 2011

Melissa A. Lane ,
John R. Ireland ,
Paul W. Brazis ,
Theodora Kyratsi ,
Duck-Young Chung ,
Mercouri G. Kanatzidis  and
Carl R. Kannewurf
Melissa A. Lane
Affiliation:
Dept of Electrical and Computer Engineering, Northwestern University, Evanston, IL 60208.
John R. Ireland
Affiliation:
Dept of Electrical and Computer Engineering, Northwestern University, Evanston, IL 60208.
Paul W. Brazis
Affiliation:
Dept of Electrical and Computer Engineering, Northwestern University, Evanston, IL 60208.
Theodora Kyratsi
Affiliation:
Department of Chemistry, Michigan State University, East Lansing, MI 48824.
Duck-Young Chung
Affiliation:
Department of Chemistry, Michigan State University, East Lansing, MI 48824.
Mercouri G. Kanatzidis
Affiliation:
Department of Chemistry, Michigan State University, East Lansing, MI 48824.
Carl R. Kannewurf
Affiliation:
Dept of Electrical and Computer Engineering, Northwestern University, Evanston, IL 60208.
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Abstract

We have previously reported the successful p-type doping of CsBi4Te6 which had a high figure of merit at temperatures below 300 K. In this study, several dopants were explored to make n-type CsBi4Te6. A program of measurements was performed to identify the optimum doping concentration for several series of dopants. The highest power factors occurred around 125 K for the 0.5% Sn doped CsBi4Te6 sample which had a power factor of 21.9 μW/cm•K2 and 1.0% Te doped CsBi4Te6 which had a power factor of 21.7 μW/cm•K2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 626: Symposium Z – Thermoelectric Materials 2000 - The Next Generation Materials for Small-Scale Refrigeration and Power Generation Applications , 2000 , Z7.5
Copyright
Copyright © Materials Research Society 2000

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References

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