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DLTS Study on Annealed Low-Temperature GaAs Layers with An n-I(LT)-n Structure Grown by MBE

Published online by Cambridge University Press:  26 February 2011

Tsai-Cheng Lin ,
Hiromasa T Kaibe  and
Tsugunori Okumura
Tsai-Cheng Lin
Affiliation:
Department of Electronics and Information Eng., Tokyo Metropolitan University, 1–1 Minami-ohsawa, Hachiohji, Tokyo 192–03, Japan
Hiromasa T Kaibe
Affiliation:
Department of Electronics and Information Eng., Tokyo Metropolitan University, 1–1 Minami-ohsawa, Hachiohji, Tokyo 192–03, Japan
Tsugunori Okumura
Affiliation:
Department of Electronics and Information Eng., Tokyo Metropolitan University, 1–1 Minami-ohsawa, Hachiohji, Tokyo 192–03, Japan
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Abstract

Deep levels in the annealed low-temperature molecular beam epitaxial (LT-MBE) GaAs layer were successfully characterized by using the capacitance deep-level transient spectroscopy (C-DLTS) as well as photocapacitance quenching technique in combination with a unique sample structure. In this work, we have fabricated the samples by inserting the LT-GaAs layer into two n-type semi-conductive layers, like a sandwich (n-LT-n structure), grown at normal substrate temperatures. DLTS measurements have revealed that one electron trap dominates the annealed LT-MBE GaAs. The dominant electron trap was very similar to the so-called EL3 level. Moreover, we found the midgap level appeared upon 800-900°C RTA, although no midgap level was detected in the as-grown n-LT-n sample (annealed at 620°C) and confirmed with photoquenching measurements that it is the EL2 level.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 378: Symposium B – Defect and Impurity-Engineered Semiconductors and Devices , 1995 , 147
Copyright
Copyright © Materials Research Society 1995

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