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Disordering of a Short Period GaAs-AlGaAs Superlattice by C Diffusion

Published online by Cambridge University Press:  22 February 2011

Z. Jamal  and
P. J. Goodhew
Z. Jamal
Affiliation:
Department of Materials Science and Engineering, University of Liverpool, Liverpool, L69 3BX, United Kingdom
P. J. Goodhew
Affiliation:
Department of Materials Science and Engineering, University of Liverpool, Liverpool, L69 3BX, United Kingdom
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Abstract

Carbon doping of GaAs and AlGaAs is easily carried out during chemical beam epitaxy by controlling the proportions of the precursors trimethylgallium and triethylgallium. The diffusion of C introduced at levels of up to 1020 cm−3, has been studied by SIMS and by TEM. In the latter case the destruction of short period GaAs-Al.3Ga.7As superlattices was monitored in order to assess the extent of diffusion after annealing at 800°C. The results confirm that C is quite a stable dopant. In addition, the destruction of the superlattices indicates that the diffusion mechanism of C involves group III sublattice sites.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 282: Symposium E – Chemical Perspectives of Microelectronic Materials III , 1992 , 145
Copyright
Copyright © Materials Research Society 1993

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References

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