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Dislocation Dynamics in Ni3Al: Experiments and Computations
Published online by Cambridge University Press: 10 February 2011
Abstract
A modified electrolytic etchant has been successfully used to observe dislocation etch-pits on {100} surfaces of single crystal Ni3AI containing Hf and B additions. Four-point bending tests have been used to obtain the dependence of dislocation velocity on resolved shear stress at room temperature. A comparison with earlier studies reveal that the rate of change of dislocation velocity with resolved shear stress, to a first approximation, is independent of alloying. Atomic level simulations have been performed using the embedded atom method (EAM) to study dislocation core structures and frictional stress in Ni3Al.
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- Copyright © Materials Research Society 1999