Article contents
Diffusion Mechanisms and Nonequilibrium Defects in SI
Published online by Cambridge University Press: 21 February 2011
Abstract
The problem of the respective contributions of vacancies and self interstitials to diffusion mechanims in silicon is clarified by using a consistent model for the diffuion of P, As and B which involves the resolution of the coupled continuity equations for the impurities, the vacancies and the self-interstitials. This model allows also the understanding of basic features concerning the kinetics of the point defects in presence of impurities.
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 1985
References
REFERENCES
- 1
- Cited by