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MRS Online Proceedings Library (OPL) MRS Online Proceedings Library (OPL)

Article contents

Device Processing for GaN High Power Electronics

Published online by Cambridge University Press:  15 March 2011

S.J. Pearton ,
X.A. Cao ,
H. Cho ,
K.P. Lee ,
C. Monier ,
F. Ren ,
G. Dang ,
A.P. Zhang ,
W. Johnson ,
J.R. LaRoche ,
B.P. Gila ,
C.R. Abernathy ,
R.J. Shul ,
A.G. Baca ,
J. Han ,
J.-I. Chyi  and
J.M. Van Hove
S.J. Pearton
Affiliation:
Department of Materials Science and Engineering University of Florida, Gainesville, FL 32611, USA
X.A. Cao
Affiliation:
Department of Materials Science and Engineering University of Florida, Gainesville, FL 32611, USA
H. Cho
Affiliation:
Department of Materials Science and Engineering University of Florida, Gainesville, FL 32611, USA
K.P. Lee
Affiliation:
Department of Materials Science and Engineering University of Florida, Gainesville, FL 32611, USA
C. Monier
Affiliation:
Department of Materials Science and Engineering University of Florida, Gainesville, FL 32611, USA
F. Ren
Affiliation:
Department of Chemical Engineering University of Florida, Gainesville, FL 32611, USA
G. Dang
Affiliation:
Department of Chemical Engineering University of Florida, Gainesville, FL 32611, USA
A.P. Zhang
Affiliation:
Department of Chemical Engineering University of Florida, Gainesville, FL 32611, USA
W. Johnson
Affiliation:
Department of Chemical Engineering University of Florida, Gainesville, FL 32611, USA
J.R. LaRoche
Affiliation:
Department of Chemical Engineering University of Florida, Gainesville, FL 32611, USA
B.P. Gila
Affiliation:
Department of Materials Science and Engineering University of Florida, Gainesville, FL 32611, USA
C.R. Abernathy
Affiliation:
Department of Materials Science and Engineering University of Florida, Gainesville, FL 32611, USA
R.J. Shul
Affiliation:
Sandia National Laboratories Albuquerque, NM 87185, USA
A.G. Baca
Affiliation:
Sandia National Laboratories Albuquerque, NM 87185, USA
J. Han
Affiliation:
Sandia National Laboratories Albuquerque, NM 87185, USA
J.-I. Chyi
Affiliation:
National Central University Chung-Li 32054, Taiwan
J.M. Van Hove
Affiliation:
SVT Associates Eden Prairie, MN 55344, USA
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Abstract

Recent advances in developing process modules for GaN power devices are reviewed. These processes include damage removal in dry etched n- and p-GaN, implant doping and isolation, novel gate dielectrics, improved Schottky and ohmic contacts and deep via etching of SiC for hybrid GaN/SiC structures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 622: Symposium T – Wide-Bandgap Electronic Devices , 2000 , T7.1.1
Copyright
Copyright © Materials Research Society 2000

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References

1. see for example, Pearton, S.J., Zolper, J.C., Shul, R.J. and Ren, F.,Google Scholar
2. j. Appl. Phys. 86, 1 (1999).CrossRefGoogle Scholar
3. Shur, M.S., Mat. Res. Soc. Symp. Proc. 483, 15 (1998).CrossRefGoogle Scholar
4. Ping, A.T., Chen, Q., Yang, J.W., Khan, M.A. and Adesida, I., IEEE Trans. Electron. Dev. Lett. 19, 54 (1998).CrossRefGoogle Scholar
5. Asbeck, P.M., Yu, E.T., Lau, S.S., Sullivan, G.J., Hove, J. Van and Redwing, J.M., Electron. Lett. 33, 1230 (1997).CrossRefGoogle Scholar
6. Baron, J.M., Chu, K., Schaff, W.J., Eastman, L.F., Khan, M.A., Chen, Q., Yang, J.W. and Shur, M.S., IEEE Electron. Dev. Lett. 18, 141 (1997).Google Scholar
7. Wu, Y.F., Keller, B., Fini, P., Keller, S., Jenkins, T., Kehias, L., Baars, S. Den and Mishra, U.K., IEEE Electron. Dev. Lett. 19, 50 (1998).CrossRefGoogle Scholar
8. see the special issue of Solid-State Electron. 43 (2) (2000).Google Scholar
9. Ren, F., Hong, M., Chu, S.N.G., Marcus, M.A., Schurmann, M.J., Baca, A.G., Pearton, S.J. and Abernathy, C.R., Appl. Phys. Lett. 73, 3893 (1998).CrossRefGoogle Scholar
10. Zhang, A.P., Dang, G., Ren, F., Han, J., Polyakov, A.Y., Govorkov, A., Redwing, J.M., Cao, X. and Pearton, S.J., Appl. Phys. Lett. 76, 1767 (2000).CrossRefGoogle Scholar
11. Cao, X.A., Dang, G., Zhang, A., Ren, F., Wilson, R.G. and Pearton, S.J., J. Appl. Phys. 87, 1091 (2000).CrossRefGoogle Scholar
12. Kawai, H., Hara, M., Nakamura, F. and Imanaga, S., Electron. Lett. 34, 592 (1998).CrossRefGoogle Scholar
13. Hong, M., to be published.Google Scholar
14. Khan, Y.A., Hu, X., Sumin, G., Lunev, A., Yang, J., Gaska, R. and Shur, M.S., IEEE Electron. Dev. EDL-21, 63 (2000).Google Scholar
15. Eddy, C.R. Jr., and Molnar, B., J. Electron. Mater. 28, 314 (1999).CrossRefGoogle Scholar
16. Kozodoy, P., Smorchkova, Y.P., Hansen, M., Xing, H., Baars, S.P. Den, Mishra, U.K., Saxter, A.W., Perrin, R. and Mitchel, W.C., Appl. Phys. Lett. 75, 2444 (1999).CrossRefGoogle Scholar
17. Hull, B.A., Mohney, S.E. and Venugopalan, H.S., Appl. Phys. Lett. (in press).Google Scholar
18. Cho, H., Leerungnawarat, P., Hays, D.C., Pearton, S.J., Chu, S.N.G., Strong, R.M., Zetterling, C.-M., Östling, M. and Ren, F., Appl. Phys. Lett. 76, 739 (2000).CrossRefGoogle Scholar

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