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Device Processing for GaN High Power Electronics

Published online by Cambridge University Press:  15 March 2011

S.J. Pearton
Affiliation:
Department of Materials Science and Engineering University of Florida, Gainesville, FL 32611, USA
X.A. Cao
Affiliation:
Department of Materials Science and Engineering University of Florida, Gainesville, FL 32611, USA
H. Cho
Affiliation:
Department of Materials Science and Engineering University of Florida, Gainesville, FL 32611, USA
K.P. Lee
Affiliation:
Department of Materials Science and Engineering University of Florida, Gainesville, FL 32611, USA
C. Monier
Affiliation:
Department of Materials Science and Engineering University of Florida, Gainesville, FL 32611, USA
F. Ren
Affiliation:
Department of Chemical Engineering University of Florida, Gainesville, FL 32611, USA
G. Dang
Affiliation:
Department of Chemical Engineering University of Florida, Gainesville, FL 32611, USA
A.P. Zhang
Affiliation:
Department of Chemical Engineering University of Florida, Gainesville, FL 32611, USA
W. Johnson
Affiliation:
Department of Chemical Engineering University of Florida, Gainesville, FL 32611, USA
J.R. LaRoche
Affiliation:
Department of Chemical Engineering University of Florida, Gainesville, FL 32611, USA
B.P. Gila
Affiliation:
Department of Materials Science and Engineering University of Florida, Gainesville, FL 32611, USA
C.R. Abernathy
Affiliation:
Department of Materials Science and Engineering University of Florida, Gainesville, FL 32611, USA
R.J. Shul
Affiliation:
Sandia National Laboratories Albuquerque, NM 87185, USA
A.G. Baca
Affiliation:
Sandia National Laboratories Albuquerque, NM 87185, USA
J. Han
Affiliation:
Sandia National Laboratories Albuquerque, NM 87185, USA
J.-I. Chyi
Affiliation:
National Central University Chung-Li 32054, Taiwan
J.M. Van Hove
Affiliation:
SVT Associates Eden Prairie, MN 55344, USA
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Abstract

Recent advances in developing process modules for GaN power devices are reviewed. These processes include damage removal in dry etched n- and p-GaN, implant doping and isolation, novel gate dielectrics, improved Schottky and ohmic contacts and deep via etching of SiC for hybrid GaN/SiC structures.

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

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References

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