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Device Processing for GaN High Power Electronics
Published online by Cambridge University Press: 15 March 2011
Abstract
Recent advances in developing process modules for GaN power devices are reviewed. These processes include damage removal in dry etched n- and p-GaN, implant doping and isolation, novel gate dielectrics, improved Schottky and ohmic contacts and deep via etching of SiC for hybrid GaN/SiC structures.
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- Copyright © Materials Research Society 2000