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Device Model for Light-Emitting Field-Effect Transistors with Organic Semiconductor Channel

Published online by Cambridge University Press:  01 February 2011

P. Paul Ruden
Affiliation:
ruden@umn.edu, University of Minnesota, ECE, 200 Union Street S.E., Minneapolis, MN, 55455, United States, (612) 624-6350
Darryl L. Smith
Affiliation:
dsmith@lanl.gov, Los Alamos National Laboratory, Los Alamos, NM, 87545, United States
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Abstract

We present a device model for light-emitting, ambipolar, organic field-effect transistors based on the gradual channel approximation. The model results are in very good agreement with recent experimental data. Trapping of injected carriers in localized states in the channel region is shown to be an important mechanism that can strongly affect the transfer characteristics and the light emission of these devices.

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

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References

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Device Model for Light-Emitting Field-Effect Transistors with Organic Semiconductor Channel
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