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Development of Structure-Property Relationships in Disordered Zirconia Thin Films for High Energy Density Mim Capacitors

Published online by Cambridge University Press:  26 February 2011

Guneet Sethi
Affiliation:
gsethi@psu.edu, The Pennsylvania State University, Materials Research Institute, 261 Materials Research Lab, University Park, PA, 16802, United States
Michael T. Lanagan
Affiliation:
mxl46@psu.edu, The Pennsylvania State University, Materials Research Institute, 261 Materials Research Lab, University Park, PA, 16802, United States
Eugene Furman
Affiliation:
euf1@psu.edu, The Pennsylvania State University, Materials Research Institute, 261 Materials Research Lab, University Park, PA, 16802, United States
Mark W. Horn
Affiliation:
mwh4@psu.edu, The Pennsylvania State University, Materials Research Institute, 261 Materials Research Lab, University Park, PA, 16802, United States
Corresponding
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Abstract

Amorphous zirconium oxide thin films were prepared by reactive magnetron sputtering. The dielectric films were characterized by impedance spectroscopy with temperature. The effect of annealing on capacitor performance was studied. Annealing gold electroded thin films at 250°C greatly reduced the losses with little changes in crystallinity. Space charge relaxation started to appear at 190°C. The activation energy for the relaxation was 0.84 eV with a very low relaxation frequency at room temperature (0.23μHz). Electrode effects dominated at very low frequencies at all temperatures. AC conductivity followed the universality behavior for the AC charge transport showing that the films are highly disordered. No DC conductivity regime was observed indicating that DC conductivity is very low. DC conductivity of the films was of the order of 10−13 S/m, which is lesser than the comparable thickness high quality gate oxides.

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

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References

1. Wagner, A.V., Johnson, G.W., Barbee, T.W. Jr., Mater. Res. Soc. Proc. 574, 219224 (1999).CrossRefGoogle Scholar
2. Ye, Y., Zhang, S. Z., 14th IEEE Pulsed Power Conference, Dallas, TX, 719722 (2003).Google Scholar
3. O'Dawyer, J.J., Oxford University Press, London, UK (1964).Google Scholar
4. Kuo, D.H., Chien, C.H., Thin Solid Films, 429, 4045 (2003).CrossRefGoogle Scholar
5. Amor, S. Ben, Rogier, B., Baud, G. et al., Mat. Sci. Engg. B, 57, 2839 (1998).CrossRefGoogle Scholar
6. Ning-Lin, Z., Zhi-Tang, S., Chin. Phy. Let., 20, 2, 273 (2003).CrossRefGoogle Scholar
7. Houssa, M., High-k Gate Dielectrics, Institute Physics Publishing, Philadelphia, PA, (2004).CrossRefGoogle Scholar
8. Pengtao Gao, Meng, L.J., Santos, M.P. dos, Thin Solid Films, 377–278, 557561 (2000).Google Scholar
9. Wong, M.S., Chia, W.J., Yashar, P., Surf. Coat. Tech., 86–87, 381387 (1996).CrossRefGoogle Scholar
10. Gao, P., Meng, L.J., Santos, M.P. dos, Teixeira, V., Vacuum, 56, 143 (2000).CrossRefGoogle Scholar
11. Ji, Z., Haynes, J.A., Ferber, M.K., Rigsbee, J.M., Surf. Coat. Tech., 135, 109 (2001).CrossRefGoogle Scholar
12. Wu, Kai, Okamoto, Tatsuki, Suzuoki, Yasuo, J. Appl. Phys., 98,114102–1 (2005).CrossRefGoogle Scholar
13. Sethi, G., Lanagan, M.T., Horn, M.W., Thin Solid Films, (2006) submitted.Google Scholar
14. Barbee, T.W. Jr. Johnson, G.W., US Patent 5 742 471 (21 April 1998).Google Scholar
15. Russak, M.A., Jahnes, C.V., Katz, E.P., J. Vac. Sci. Tech. A, 7, 3, 1248 (1989).CrossRefGoogle Scholar
16. Alberti, A., Borzi, A.M., Ravesi, S., Appl. Phys. Let., 84, 2, 209211 (2004).CrossRefGoogle Scholar
17. Mraz, S., Schneider, J.M., Appl. Phys. Let., 89, 051502 (2006).CrossRefGoogle Scholar
18. Novkovski, N., Semicond. Sci. and Tech., 21, 945951 (2006).CrossRefGoogle Scholar
19. Dearnaley, G., Morgan, D.V., Stoneham, A.M., J. Non-Cryst. Solids, 4, 593612 (1970).CrossRefGoogle Scholar
20. Jonnson, A.K., Niklasson, G.A., Veszelei, M., Thin Solid Films, 202, 242247 (2002).CrossRefGoogle Scholar
21. Dyre, J.C. and Schroder, T.B., Rev. Modern Phys., 72, 3, 873 (2000).CrossRefGoogle Scholar

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Development of Structure-Property Relationships in Disordered Zirconia Thin Films for High Energy Density Mim Capacitors
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