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Deposition of Highly (100) Oriented PZT Film Using Lanthanum Nitrate/Nickel Acetate Buffer Layer

Published online by Cambridge University Press:  26 February 2011

Jong-Jin Choi
Affiliation:
finaljin@kmail.kimm.re.kr, Korea Institute of Machinery & Materials, Department of Future Technology, 66 Sang-Nam Dong, Chang-Won, Gyeong-Nam, 641-831, Korea, Republic of, 82-55-280-3371, 82-55-280-3399
Byung-Dong Hahn
Affiliation:
cera72@kmail.kimm.re.kr, Korea Institute of Machinery & Materials, Department of Future Technology, Korea, Republic of
Joo-Hee Jang
Affiliation:
Joohee1820@hotmail.com, Pykyong National University, Division of Materials Science and Engineering
Woon-Ha Yoon
Affiliation:
uhyoon@kmail.kimm.re.kr, Korea Institute of Machinery & Materials, Department of Future Technology, Korea, Republic of
Dong-Soo Park
Affiliation:
pds1590@kmail.kimm.re.kr, Korea Institute of Machinery & Materials, Department of Future Technology, Korea, Republic of
Hyoun-Ee Kim
Affiliation:
kimhe@snu.ac.kr, Seoul National University, School of Materials Science & Engineering
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Abstract

Highly (100) oriented Pb(Zr,Ti)O3 [PZT] films were fabricated using lanthanum nitrate/nickel acetate double layers as a buffer layer, regardless of the other deposition conditions, such as the pyrolysis temperature, pyrolysis time, annealing temperature, and heating rate. The buffer layer was also acted as a very effective barrier against Pb-Si interdiffusion, thus allowing for the direct deposition of PZT films on Si, SiO2/Si, and glass substrates. The strong orientation was attributed to the formation of a crystalline intermediate phase between the PZT and lanthanum nitrate during annealing. The lanthanum nitrate/nickel acetate double layers became a lanthanum nickel oxide (LaNiO3), which shows good electrical conductivity, after an annealing process at 650°C. The nature and the role of lanthanum nitrate buffer as a layer for the growth of highly (100) oriented PZT films have been studied. The dielectric, ferroelectric, piezoelectric and electrooptic properties of the highly (100) oriented PZT films with a lanthanum nitrate/nickel acetate buffer layer were measured and compared with the values measured from the (111) and (100) oriented PZT films deposited without buffer layer.

Type
Research Article
Copyright
Copyright © Materials Research Society 2006

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