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Deposition of GaN Films on Glass Substrate and Its Application to UV Electroluminescent Devices

Published online by Cambridge University Press:  11 February 2011

Tohru Honda
Affiliation:
Department of Electronic Engineering, Kohgakuin University, 2665–1 Nakano-machi, Hachiohji, Tokyo 192–0015, JAPAN
Kenichi Iga
Affiliation:
Department of Electronic Engineering, Kohgakuin University, 2665–1 Nakano-machi, Hachiohji, Tokyo 192–0015, JAPAN
Hideo Kawanishi
Affiliation:
Department of Electronic Engineering, Kohgakuin University, 2665–1 Nakano-machi, Hachiohji, Tokyo 192–0015, JAPAN
Takahiro Sakaguchi
Affiliation:
P&I Lab., Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226–8503, JAPAN
Fumio Koyama
Affiliation:
P&I Lab., Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226–8503, JAPAN
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Abstract

GaN films were deposited on glass substrates using a compound-source molecular beam epitaxy technique. Electroluminescent devices with a double-insulator structure were also fabricated using the deposited films. When the devices were operated using a sine-wave voltage, one of the emission peaks was located in the UV spectral region. Introducing a small ammonia flow increased the deposition rate.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

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References

REFERENCES

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