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Deposition and Etching of Conformal Boron Films for Neutron Detector Applications

Published online by Cambridge University Press:  07 March 2011

Nicholas LiCausi ,
Justin Clinton ,
Yaron Danon ,
James J.-Q. Lu  and
Ishwara B. Bhat
Nicholas LiCausi
Affiliation:
Electrical, Computer and Systems Engineering Department, Rensselaer Polytechnic Institute, 110 8th Street, Troy, NY 12180, U.S.A.
Justin Clinton
Affiliation:
Mechanical, Aerospace and Nuclear Engineering Department, Rensselaer Polytechnic Institute, 110 8th Street, Troy, NY 12180, U.S.A.
Yaron Danon
Affiliation:
Mechanical, Aerospace and Nuclear Engineering Department, Rensselaer Polytechnic Institute, 110 8th Street, Troy, NY 12180, U.S.A.
James J.-Q. Lu
Affiliation:
Electrical, Computer and Systems Engineering Department, Rensselaer Polytechnic Institute, 110 8th Street, Troy, NY 12180, U.S.A.
Ishwara B. Bhat
Affiliation:
Electrical, Computer and Systems Engineering Department, Rensselaer Polytechnic Institute, 110 8th Street, Troy, NY 12180, U.S.A.
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Abstract

In this work, the deposition of boron using low pressure chemical vapor deposition (LPCVD) has been investigated on planar and deep reactive ion etched (DRIE) Si substrates. Deposition rate and conformal coverage have been studied. Additional studies of “dry” RIE etching and “wet” chemical etching of the deposited boron films are presented. Deposition rates as high as 1 μm/hr and conformal coverage ratios of ~80% have been achieved. Etching rates for various methods studied range widely from 0.35 μm/hr to 1.2 μm/min.

Keywords

B chemical vapor deposition (CVD) (deposition) reactive ion etching
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1307: Symposium CC – Boron and Boron Compounds—From Fundamentals to Applications , 2011 , mrsf10-1307-cc07-02
Copyright
Copyright © Materials Research Society 2011

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