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Defects in Low-Temperature-Grown MBE GaAs as Studied by a Variation of TSC Spectroscopy

Published online by Cambridge University Press:  15 February 2011

Z-Q Fang
Affiliation:
Physics Department, Wright State University, Dayton, OH 45435
D. C. Look
Affiliation:
Physics Department, Wright State University, Dayton, OH 45435
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Abstract

A zero-bias thermally stimulated current (TSC) spectroscopy under both optical (1.96eV) and electrical excitation using samples with a Schottky contact on the top was applied to annealed LTMBE GaAs grown at different temperatures, and bulk SI GaAs with different stoichiometries. The results show that: 1) the new TSC technique is capable of revealing the traps at 235K<T<380K and is effective in indicating the crystal stoichiometry of bulk SI GaAs; 2) the driving force for the currents under a zero-bias comes from the builtin surface field as well as a thermal gradient; 3) the trap species in the annealed LTMBE GaAs samples and the annealed control SI GaAs sample are similar, especially for TA(0.79eV), Ta (0.33eV), T4 (0.29eV), and T6*(0.16eV); and 4) the trap densities in LTMBE samples are higher than those in the control samples and are dependent on the MBE growth temperature.

Type
Research Article
Copyright
Copyright © Materials Research Society 1992

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References

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Defects in Low-Temperature-Grown MBE GaAs as Studied by a Variation of TSC Spectroscopy
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