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DEFECTS IN GaAs GROWN ON Ge SUBSTRATES

Published online by Cambridge University Press:  28 February 2011

C. B. CARTER
Affiliation:
Department of Materials Science and Engineering, Bard Hall, Cornell University, Ithaca, NY14853.
B.C. DE COOMAN
Affiliation:
Department of Materials Science and Engineering, Bard Hall, Cornell University, Ithaca, NY14853.
N.H. CHO
Affiliation:
Department of Materials Science and Engineering, Bard Hall, Cornell University, Ithaca, NY14853.
R.M. FLETCHER
Affiliation:
School of Electrical Engineering, Phillips Hall, Cornell University, Ithaca, NY14853.
D.K. WAGNER
Affiliation:
School of Electrical Engineering, Phillips Hall, Cornell University, Ithaca, NY14853.
J. BALLANTYNE
Affiliation:
School of Electrical Engineering, Phillips Hall, Cornell University, Ithaca, NY14853.
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Abstract

The growth of polar semiconducting materials on non-polar semiconducting substrates is illustrated by experimental observations of GaAs grown on Ge substrates and on Ge epilayers which had been grown on Si substrates. The GaAs epilayers are grown in each case by metal-organic, vapor-phase deposition. The GaAs/Ge heterophase junction, the grain boundaries in GaAs grown on {110} Ge and on {001} Ge/Si composit substrates and the anti-phase boundaries in GaAs grown on {001} Ge substrates are eat.h illustated. The interfaces have been studied by transmission electron microscopy and reveal the pronounced faceting of the anti-phase boundaries in GaAs. Also demonstrated experimentally is the strong interaction between dislocations/grain boundaries and these anti-phase boundaries.

Type
Research Article
Copyright
Copyright © Materials Research Society 1986

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References

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