Skip to main content Accessibility help
×
Home
Hostname: page-component-559fc8cf4f-6f8dk Total loading time: 0.524 Render date: 2021-02-26T08:15:34.574Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "metricsAbstractViews": false, "figures": false, "newCiteModal": false, "newCitedByModal": true }

Deep Defects in Fe-Doped GaN Layers Analysed by Electrical and Photoelectrical Spectroscopic Methods

Published online by Cambridge University Press:  01 February 2011

H. Witte
Affiliation:
Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg, D-39016 Magdeburg, Germany
K. Fluegge
Affiliation:
Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg, D-39016 Magdeburg, Germany
A. Dadgar
Affiliation:
Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg, D-39016 Magdeburg, Germany
A. Krtschil
Affiliation:
Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg, D-39016 Magdeburg, Germany
A. Krost
Affiliation:
Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg, D-39016 Magdeburg, Germany
J. Christen
Affiliation:
Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg, D-39016 Magdeburg, Germany
Get access

Abstract

The electrical activity of iron in Fe- doped, and in Si and Mg co-doped GaN layers grown on sapphire substrates by metal organic vapor phase epitaxy was studied as shown by temperature dependent Hall Effect (TDH) measurements. In all samples iron doping generates an acceptor defect, which compensates donors in n-type GaN. Furthermore, iron doping causes strong potential inhomogeneities, which decrease the Hall mobility in the layers. To verify, if iron creates only hole traps, defects in n-type Si:Fe and Fe doped samples were investigated. The well known dominant electron traps in n-type GaN at 520 – 550 meV and 480 meV were found by deep level transient spectroscopy and thermal admittance spectroscopy, respectively. A high Fe-doped GaN layer shows a low p-type conductivity dominated by the iron acceptor. An activation energy of E V + 460 meV was determined by TDH indicating, that the iron acceptor correlates with this defect level.

Type
Research Article
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below.

References

/1/ Cao, X.A., Pearton, S.J., Dang, G.T., Zhang, A.P., Ren, F., Wilson, R.G., Van Hove, J.M.; J. Appl. Phys. 87, 1091 (2000)CrossRefGoogle Scholar
/2/ Polykov, A.Y., Smirnov, N.B., Govorkov, A.V., Pashkova, N.V., Shlensky, A.A., Pearton, S.J., Overberg, M.E., Abernathy, C.R., Zavada, J.M., Wilson, R.G.; J. Appl. Phys. 93, 5388 (2003)CrossRefGoogle Scholar
/3/ Polyakov, A.Y., Smirnov, N.B., Govorkov, A.V., Pearton, S.J.; Appl. Phys. Lett. 83, 3314 (2003)CrossRefGoogle Scholar
/4/ Krtschil, A., Witte, H., Lisker, M., Christen, J., Birkle, U., Einfeldt, S., Hommel, D.; J. Appl. Phys. 84, 4020 (1998)CrossRefGoogle Scholar
/5/ Krtschil, A., Kielburg, A., Witte, H., Krost, A., Christen, J., Wenzel, A., Rauschenbach, B.; Appl. Phys. Lett. 82, 403 (2003)CrossRefGoogle Scholar
/6/ Dang, G., Cao, X.A., Ren, F., Pearton, S.J., Han, J., Baca, A.G., Shul, R.J., Wilson, R.G.; MRS Internet J. Nitrode Semicond. Res.; 5S1, W11.68 (2000)Google Scholar
/7/ Krtschil, A., Dadgar, A., Krost, A.; Appl. Phys. Lett. 82, 2263 (2003)CrossRefGoogle Scholar
/8/ Witte, H., Krtschil, A., Lisker, M., Christen, J., Krost, A., Kuhn, B., Scholz, F.; Mater. Science and Engin. B 82, 85 (2001)CrossRefGoogle Scholar
/9/ Heitz, R., Maxim, P., Eckey, L., Thurian, P., Hoffmann, A., Broser, I., Pressel, K., Meyer, B.K.; Physical Review B 55, 4382 (1997)CrossRefGoogle Scholar
/10/ Hacke, P., Detchprohm, T., Hiramatsu, K., Sawaki, N., Takatomo, T., Miyake, K.; J. Appl. Phys. 76, 304 (1994)CrossRefGoogle Scholar

Full text views

Full text views reflects PDF downloads, PDFs sent to Google Drive, Dropbox and Kindle and HTML full text views.

Total number of HTML views: 0
Total number of PDF views: 6 *
View data table for this chart

* Views captured on Cambridge Core between September 2016 - 26th February 2021. This data will be updated every 24 hours.

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Deep Defects in Fe-Doped GaN Layers Analysed by Electrical and Photoelectrical Spectroscopic Methods
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

Deep Defects in Fe-Doped GaN Layers Analysed by Electrical and Photoelectrical Spectroscopic Methods
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

Deep Defects in Fe-Doped GaN Layers Analysed by Electrical and Photoelectrical Spectroscopic Methods
Available formats
×
×

Reply to: Submit a response


Your details


Conflicting interests

Do you have any conflicting interests? *