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Damage and Lattice Strain in Ion-Irradiated AlxGai-xAs

Published online by Cambridge University Press:  21 February 2011

P. Partyka
Affiliation:
Materials Research Laboratory, University of Illinois at Urbana, Urbana, IL 61801
R.S. Averback
Affiliation:
Materials Research Laboratory, University of Illinois at Urbana, Urbana, IL 61801
D.V. Forbes
Affiliation:
Materials Research Laboratory, University of Illinois at Urbana, Urbana, IL 61801
J.J. Coleman
Affiliation:
Materials Research Laboratory, University of Illinois at Urbana, Urbana, IL 61801
P. Ehrhart
Affiliation:
Institut fur Festkörperforschung, Forschungszentrum, Jülich, D-52425 Jiilich, Germany
W. Jager
Affiliation:
Institut fur Festkörperforschung, Forschungszentrum, Jülich, D-52425 Jiilich, Germany
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Abstract

Radiation-induced damage and strain in AlxGai-xAs (x=5 to 1) were investigated by measurements of the lattice parameter using x-ray diffraction. Irradiations employed MeV C, Ar and Au ion beams with a substrate temperature of 80 K. For samples with high Al content, the out-of-plane lattice parameter increased with fluence at low doses, saturated, and then decreased to nearly its original value. The in-plane lattice parameter did not change, throughout. These results were independent of the irradiation particle when scaled by damage energy. For the Al.5Ga.5As samples, however, the out-of-plane lattice parameter increased monotonically with dose to large strains until the layer amorpnized. Selected samples were examined by high resolution and conventional transmission electron microscopy (TEM). Channeling Rutherford backscattering spectrometry (CRBS) was also employed to monitor the buildup of damage in many samples. Recovery of the lattice parameter during subsequent thermal annealing was also investigated.

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

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References

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