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Cyan electroluminescence from n-ZnO/i-CdZnO/p-Si heterojunction diodes
Published online by Cambridge University Press: 31 January 2011
Abstract
n-ZnO/i-CdZnO thin film was grown on p-type Si substrate by plasma-assisted molecular-beam epitaxy (MBE). Rectifying I-V curves show typical diode characteristics. Cyan electroluminescence emissions at around 473 nm were observed when the diodes were forward-biased at room temperature. The emission intensity increases with the increase of the injection current. Room temperature photoluminescence verifies the electroluminescence emissions come from CdZnO layer.
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- Copyright © Materials Research Society 2010