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CVD Diamond Dislocations Observed by X-ray Topography, Birefrengence Image and Cathodoluminesence mapping

Published online by Cambridge University Press:  02 March 2011

Yukako Kato
Affiliation:
Diamond Research Laboratory, Advanced Industrial Science and Technology (AIST), Tsukuba 305-8568, Japan
Hitoshi Umezawa
Affiliation:
Diamond Research Laboratory, Advanced Industrial Science and Technology (AIST), Tsukuba 305-8568, Japan
Hirotaka Yamaguchi
Affiliation:
Nanoelectronics Research Institute, Advanced Industrial Science and Technology (AIST), Tsukuba 305-8568, Japan
Tokuyuki Teraji
Affiliation:
National Institute for Material Science, Tsukuba 305-0047, Japan
Shin-ichi Shikata
Affiliation:
Diamond Research Laboratory, Advanced Industrial Science and Technology (AIST), Tsukuba 305-8568, Japan
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Abstract

Semiconductor epitaxial CVD single crystal diamond is considered a potential material for power devices because of its unique characteristics. In the discussion on the relationship between crystal quality and device performance, the atomic purity and defect concentration have been considered; however, the information on the local stress-strain distribution in a single crystal is not sufficient. In this paper, the dislocation analysis is shown for the suggestion of the established standard dislocation analysis method. The aggregation of mixed dislocations is observed by the analysis by using the birefringence image, cathodoluminescence image and x-ray topography.

Type
Research Article
Copyright
Copyright © Materials Research Society 2011

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