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Cu CMP and its Challenge for 20nm Nodes and Beyond

Published online by Cambridge University Press:  30 July 2012

John H. Zhang*
Affiliation:
STMicroelectronics, 2070 Route 52, Hopewell Junction, NY 12533, U.S.A.
Wei-Tsu Tseng
Affiliation:
IBM Semiconductor Research and Development Center (SRDC), 2070 Route 52, Hopewell Junction, NY 12533, U.S.A
Laertis Economikos
Affiliation:
IBM Semiconductor Research and Development Center (SRDC), 2070 Route 52, Hopewell Junction, NY 12533, U.S.A
Qiang Fang
Affiliation:
GLOBALFOUNDRIES, 2070 Route 52, Hopewell Junction, NY 12533, U.S.A.
Jianping Zheng
Affiliation:
GLOBALFOUNDRIES, 2070 Route 52, Hopewell Junction, NY 12533, U.S.A.
Lin Yang
Affiliation:
IBM Semiconductor Research and Development Center (SRDC), 2070 Route 52, Hopewell Junction, NY 12533, U.S.A
Donald F. Canaperi
Affiliation:
IBM at Albany Nanotech, Albany, NY 12203, USA
Michael Lofaro
Affiliation:
IBM Research, Yorktown Heights, NY 10598, USA
Ben Kim
Affiliation:
STMicroelectronics, 2070 Route 52, Hopewell Junction, NY 12533, U.S.A.
Chao-Kun Hu
Affiliation:
IBM Research, Yorktown Heights, NY 10598, USA
Eric G. Liniger
Affiliation:
IBM Research, Yorktown Heights, NY 10598, USA
Richard Murphy
Affiliation:
IBM Semiconductor Research and Development Center (SRDC), 2070 Route 52, Hopewell Junction, NY 12533, U.S.A
Tsong L. Leo Tai
Affiliation:
IBM Semiconductor Research and Development Center (SRDC), 2070 Route 52, Hopewell Junction, NY 12533, U.S.A
Walter Kleemeier
Affiliation:
STMicroelectronics, 2070 Route 52, Hopewell Junction, NY 12533, U.S.A.
Cindy Goldberg
Affiliation:
STMicroelectronics, 2070 Route 52, Hopewell Junction, NY 12533, U.S.A.
Jennifer Muncy
Affiliation:
IBM Semiconductor Research and Development Center (SRDC), 2070 Route 52, Hopewell Junction, NY 12533, U.S.A
Xiaomeng Chen
Affiliation:
IBM Semiconductor Research and Development Center (SRDC), 2070 Route 52, Hopewell Junction, NY 12533, U.S.A
Ron Sampson
Affiliation:
STMicroelectronics, 2070 Route 52, Hopewell Junction, NY 12533, U.S.A.
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Abstract

The challenges associated with meeting 20nm technology requirements for better Cu CMP process uniformity and lower defectivity have been studied. Required improvements in uniformity were obtained through platen process optimization along with evaluation & selection of specific Cu slurries and pads and their performance reported. The principal factors influencing defect formation, including Cu barrier metallurgy, interconnect pattern density and process queue times were studied. Specific new post CMP clean chemistries were evaluated to assess their capability to suppress defect formation and their performance reported. The trade off between uniformity and defect suppression as a function slurry, pad and post Cu CMP clean chemistry is described.

Type
Articles
Copyright
Copyright © Materials Research Society 2012

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References

1. Choi, J., Wang, C., Wei, Y., Zielinski, E., Tseng, W-T, Moon, Y., Kelling, M., Economikos, L., Mater. Res. Soc. Symp. Proc., vol. 1249, 1249-E01-04 (2010)CrossRefGoogle Scholar
2. Economikos, L., Tseng, W-T, Canaperi, D. F., Lofaro, M., Krishnan, M., Ticknor, A., Munchy, J., Zhang, J. H., Fang, Q., Zheng, J., Proc. of CSTIC, Shanghai, China, 2012 Google Scholar
3. Canaperi, D. F., Kawaguchi, T., Loquet, Y., Tsumura, K., Isobayashi, A., Smalley, M.. Mater. Res. Soc. Symp. Proc., vol. 1249, 1249-E01-09 (2010)CrossRefGoogle Scholar
4. Tseng, W-T, Canaperi, D. F., Zhang, J. H., Fang, Q., Zheng, J., Ticknor, A., Tai, L., MacDougal, J., Economikos, L., Muncy, J., Chen, X., Proc. of ASMC, Saratoga Springs, New York, 2012 Google Scholar
5. Zhang, J.H., R.Venigalla, Stoll, D. C., Wallner, J., Thompson, J. F., Sun, J., Zhuang, H., Xiao, C., Koo, J.E., Park, J. E., Kleemier, W., Barla, K., Truong, C., Chen, X., and Sampson, R., Proc. VMIC, 25, 95 (2008)Google Scholar
6. Zhang, J. H., Economikos, L., Tseng, W-T, Choi, J., Fang, Q.3, Tang, T J., Salfelder, J.4, Truong, C. and Ferreira, P., Mater. Res. Soc. Symp. Proc., vol. 1249, 1249-E01-06 (2010)CrossRefGoogle Scholar

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