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Crystallization of Amorphous Silicon-Aluminum thin Films: IN-SITU Observation and Thermal Analysis.

Published online by Cambridge University Press:  21 February 2011

Toyohiko J. Konno  and
Robert Sinclair
Toyohiko J. Konno
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305
Robert Sinclair
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305
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Abstract

The crystallization of sputter-deposited Si/Al amorphous alloys was examined by transmission electron microscopy (TEM) and differential scanning calorimetry (DSC). In-situ high-resolution TEM reveals the existence of an Al layer between the amorphous matrix and the growing crystalline phase. The activation energy for the growth is about 1.2eV, roughly corresponding to the activation energy of Si diffusion in Al. These two observations support the view that a crystallization mechanism, in which an Al buffer layer provides the shortest reaction path, is responsible for the reaction. The product microstructure exhibits secondary crystallization at a higher temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 237: Symposium Ca – Interface Dynamics and Growth , 1991 , 609
Copyright
Copyright © Materials Research Society 1992

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References

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