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Crystallization of Amorphous Si In Al/Si Multilayers

Published online by Cambridge University Press:  15 February 2011

Toyohiko J. Konno
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305
Robert Sinclair
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305
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Abstract

The crystallization of amorphous Si in a Al/Si multilayer (with a modulation length of about 120Å) was investigated using transmission electron microscopy, differential scanning calorimetry and X-ray diffraction. Amorphous Si was found to crystallize at about 175 °C with the heat of reaction of 11±2(kJ/mol). Al grains grow prior to the nucleation of crystalline Si. The crystalline Si was found to nucleate within the grown Al layers. The incipient crystalline Si initially grows within the Al layer and then spreads through the amorphous Si and other Al layers. Because of extensive intermixing, the original layered structure is destroyed. The Al(111) texture is also enhanced.

Type
Research Article
Copyright
Copyright © Materials Research Society 1992

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References

1. Kuwano, Y. and Ohnishi, M., JARECT, ed.Hamakawa, Y., Ohmsha and North-Holland Publishing Co., 6 “Amorphous Semiconductor Technologies & Devices” (1983) 204 Google Scholar
2. Kawamura, T., Yamamoto, N. and Nakayama, Y., JARECT, ed.Hamakawa, Y., Ohmsha and North-Holland Publishing Co. 6 (1983) 325 Google Scholar
3. Roorda, S., Kammann, D., Sinke, W.C., Van De Walle, G.F.A. and Van Gorkum, A.A., Mat.Lett. 2 (1990) 259 CrossRefGoogle Scholar
4. Zellama, K., Germain, P., Squelard, S., Bourgoin, J.C. and Thomas, P.A., J.Appl.Phys. 50 (1979) 6995 CrossRefGoogle Scholar
5. Donovan, E.P., Spaepen, F., Turnbull, D., Poate, J.M. and Jacobson, D.C., J.Appl.Phys. 57(1985) 1795 Google Scholar
6. Tatsumi, Y., Hirata, M. and Yamada, K., J.Phys.Soc.Jpn., 50 (1981) 2288 Google Scholar
7. Oki, F., Ogawa, Y. and Fujiki, Y., Jpn.J.Appl.Phys., 8 (1969) 1056 CrossRefGoogle Scholar
8. Bosnell, J.R. and Voisey, U.C., Thin Solid Films, 6 (1970) 161 Google Scholar
9. Herd, S.R., Chaudhari, P. and Brodsky, M.H., J.Non-Cryst.Solid, 1 (1972) 309 CrossRefGoogle Scholar
10. Sigurd, D., Ottaviani, G., Marrello, V., Mayer, J.W. and McCaldin, J.O., J.Non-Cryst.Solid, 12 (1973) 135 CrossRefGoogle Scholar
11. Ottaviani, G., Sigurd, D., Marrello, V., Mayer, J.W. and McCaldin, J.O., J.Appl.Phys., 45 (1974) 1730 CrossRefGoogle Scholar
12. Hultman, L., Robertsson, A., Hentzell, H.T.G., Engstrom, I. and Psaras, P.A., J.Appl.Phys., 62 (1987) 3647 CrossRefGoogle Scholar
13. Hung, L.S., Chen, S.H. and Mayer, J.W., Mat.Res.Soc.Proc., 25 (1984) 253 CrossRefGoogle Scholar
14. Homma, H., Schuller, I.K., Sevenhans, W. and Bruynseraede, Y., Appl.Phys.Lett. 50 (1987) 594 CrossRefGoogle Scholar
15. Bravman, J.C. and Sinclair, R., J.Electron Microsc.Tech. 1 (1984) 53 CrossRefGoogle Scholar
16. Morgiel, J., Wu, I.W., Chiang, A. and Sinclair, R., Mat.Res.Soc.Proc., 182 (1990) 191 CrossRefGoogle Scholar
17. Kirtikar, A.S., Morgiel, J., Sinclair, R., Wu, I.W. and Chiang, A., Mat.Res.Soc.Proc., in press (1991)Google Scholar

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