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Crystalline Perfection of Epitaxial Structure: Correlations with Composition, Thickness, and Elastic Strain of Epitaxial Layers

Published online by Cambridge University Press:  31 January 2011

Balakrishnam R Jampana
Affiliation:
balu@udel.edu, University of Delaware, Materials Science and Engineering, Newark, Delaware, United States
Nikolai N Faleev
Affiliation:
faleev@mail.eecis.udel.edu, University of Delaware, Electrical and Computer Engineering, Newark, Delaware, United States
Ian T Ferguson
Affiliation:
ian.ferguson@ece.gatech.edu, Georgia Institute of Technology, School of Electrical and Computer Engineering, Atlanta, Georgia, United States
Robert L Opila
Affiliation:
opila@udel.edu, University of Delaware, Materials Science and Engineering, Newark, Delaware, United States
Christiana B Honsberg
Affiliation:
honsberg@asu.edu, Arizona State University, Electrical Engineering, Tempe, Alabama, United States
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Abstract

Crystalline perfection of InGaN epi-layers is the missing design parameter for InGaN solar cells. Structural deterioration of InGaN epi-layers depends on the thickness, composition and growth conditions as well. Increasing the InGaN epi-layer thickness beyond a critical point introduces extended crystalline defects that hinder the optical absorption and electrical properties. Increasing the InGaN composition further reduces this critical layer thickness. The optical absorption band edge is sharp for III-nitride direct band gap materials. The band edge profile is deteriorated by creation of extended crystalline defects in the InGaN epitaxial material. The design of InGaN solar cells requires the growth of epi-layers where a trade off between crystalline perfection and optical absorption properties is reached.

Type
Research Article
Copyright
Copyright © Materials Research Society 2009

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References

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Crystalline Perfection of Epitaxial Structure: Correlations with Composition, Thickness, and Elastic Strain of Epitaxial Layers
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