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Crystal structure and thermoelectric properties of ReSi1.75 silicide

Published online by Cambridge University Press:  11 February 2011

J-J Gu
Affiliation:
Department of Materials Science & Engineering, Kyoto University, Sakyo-ku, Kyoto, 606–8501, Japan
K. Kuwabara
Affiliation:
Department of Materials Science & Engineering, Kyoto University, Sakyo-ku, Kyoto, 606–8501, Japan
K. Tanaka
Affiliation:
Department of Materials Science & Engineering, Kyoto University, Sakyo-ku, Kyoto, 606–8501, Japan
H. Inui
Affiliation:
Department of Materials Science & Engineering, Kyoto University, Sakyo-ku, Kyoto, 606–8501, Japan
M. Yamaguchi
Affiliation:
Department of Materials Science & Engineering, Kyoto University, Sakyo-ku, Kyoto, 606–8501, Japan
A. Yamamoto
Affiliation:
National Institute for Advanced Industrial Science and Technology, AIST Central 5, Tsukuba, Ibaraki, 303–8568, Japan
T. Ohta
Affiliation:
National Institute for Advanced Industrial Science and Technology, AIST Central 5, Tsukuba, Ibaraki, 303–8568, Japan
H. Obara
Affiliation:
National Institute for Advanced Industrial Science and Technology, AIST Central 5, Tsukuba, Ibaraki, 303–8568, Japan
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Abstract

The crystal structure of the defect disilicide formed with Re (ReSi1.75) has been refined by transmission electron microscopy combined with first-principles calculation. The crystal structure is monoclinic with the space group Cm (mc44) due to an ordered arrangement of vacancies on Si sites in the underlying (parent) C11b lattice. The thermoelectric properties of ReSi1.75 are highly anisotropic. Its electrical conduction is of n-type when measure along [001] while it is of p-type when measured along [100]. Although the value of Seebeck coefficient along [100] is moderately high (150–200 μV/K), it is very high along [001] (250–300 μV/K). As a result, a very high value of dimensionless figure of merit (ZT) of 0.7 is achieved at 1073 K when measured along [001].

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

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References

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