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Cross-Sectional Transmission Electron Microscopy of Defects in Beta Silicon Carbide Thin Films
Published online by Cambridge University Press: 28 February 2011
Abstract
Techniques have been developed at NCSU for fabricating cross-sectional transmission electron microscopy (XTEM) foils from monocrystalline beta silicon carbide thin films grown by chemical vapor deposition. The results of the TEM observations are utilized to discern the efficacy of the various processing parameters in terms of film quality and defect structure as well as oxidation, ion implantation and annealing procedures.
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- Copyright © Materials Research Society 1985
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