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Control of Si-SiO2 Interface Properties in MOS Devices Prepared by Plasma-Assisted and Rapid Thermal Processes

Published online by Cambridge University Press:  21 February 2011

G. Lucovsky ,
T. Yasuda ,
Y. Ma ,
S.V. Hattangady ,
X-L Xu ,
V. Misra ,
B. Hornung  and
J.J. Wortman
G. Lucovsky
Affiliation:
Departments of Physics, Materials Science and Engineering, and Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-8202, USA
T. Yasuda
Affiliation:
Departments of Physics, Materials Science and Engineering, and Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-8202, USA
Y. Ma
Affiliation:
Departments of Physics, Materials Science and Engineering, and Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-8202, USA
S.V. Hattangady
Affiliation:
Departments of Physics, Materials Science and Engineering, and Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-8202, USA
X-L Xu
Affiliation:
Departments of Physics, Materials Science and Engineering, and Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-8202, USA
V. Misra
Affiliation:
Departments of Physics, Materials Science and Engineering, and Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-8202, USA
B. Hornung
Affiliation:
Departments of Physics, Materials Science and Engineering, and Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-8202, USA
J.J. Wortman
Affiliation:
Departments of Physics, Materials Science and Engineering, and Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-8202, USA
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Abstract

This paper describes the preparation of silicon-based metal oxide semiconductor, MOS, devices, capacitors and field effect transistors, FETs, using deposited oxide dielectrics. A critical aspect of the device fabrication process is the way the Si-SiO2 interface is formed; e.g., either before, during, or after the oxide deposition. We have studied different methods of fabricating Si-SiO2 heterostructures, and have concluded that the implementation of independently controllable and sequential process steps for (i) interface formation, and (ii) oxide deposition consistently yields MOS devices with electrical properties that are superior to those of devices fabricated under other processing conditions which include specifically interface formation during the oxide deposition.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 318: Symposium Ca – Interface Control of Electrical, Chemical, and Mechanical Properties , 1993 , 81
Copyright
Copyright © Materials Research Society 1994

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References

1 Lo, G.Q., Ting, W.C., Shih, D.K., and Kwong, D.L., Appl. Phys. Lett. 56, 979 (1990).CrossRefGoogle Scholar
2 X-L, Xu, Kuehn, R.T., Wortman, J.J. and Ozturk, M.C., Appl. Phys. Lett. 60, 3063 (1992).Google Scholar
3 Batey, J. and Tierney, E., J. Appl. Phys. 60, 3136 (1986).CrossRefGoogle Scholar
4 Yasuda, T., Ma, Y., Habermehl, S., and Lucovsky, G., Appl. Phys. Lett. 60, 434 (1992).CrossRefGoogle Scholar
5 Fountain, G.G., Rudder, R.A., Hattangady, S.V., Markunas, R.J., and P.S, Lindorme,Google Scholar
6 Lucovsky, G., Yi, Ma, Yasuda, T., Silvestre, C. and Hauser, J.R., Jpn. J. Appl. Phys. 31, 4387 (1992).CrossRefGoogle Scholar
7 Lucovsky, G., Kim, S.S., Tsu, D.V., Fountain, G.G. and Markunas, R.J., J. Vac. Sci. Technol. B7, 861(1989).CrossRefGoogle Scholar
8 Kim, S.S., Stephens, D.J., Lucovsky, G., Fountain, G.G. and Markunas, R.J., J. Vac. Sci. Technol. A8, 2039 (1990).CrossRefGoogle Scholar
9 Fountain, G.G., Hattangady, S.V., Rudder, R.A., Lucovsky, G., Kim, S.S. and Tsu, D.V., J. Vac. Sci. Technol. A7, 576 (1989).CrossRefGoogle Scholar
10 Yasuda, T., Ma, Y., Habermehl, S., and Lucovsky, G., J. Vac. Sci. Technol. B10, 1844 (1992).CrossRefGoogle Scholar
11 Misra, V., Hattangady, S.V., X-L, Xu, Watkins, M.J., Hornung, B., Lucovsky, G., Wortman, J.J., Emmerichs, U., Meyer, C., Leo, K., and Kurz, H., presented at European MRS Meeting, Strasbourg, France, May 1993, and to be published in the symposium proceedings.Google Scholar
12 Hattangady, S.V., Misra, V., Yasuda, T., X-L, XU, Hornung, B., Lucovsky, G. and Wortman, J.J., J. Vac. Sci. Technol. A12 (1994), submitted for publication.Google Scholar
13 The Physics and Chemistry of SiO2 and the Si-SiO2 Interface, Ed. by Helms, C.R. and Deal, B.E., (Plenum Press, New York, 1988), Chapters 1-4.CrossRefGoogle Scholar
14 The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2, Ed. by Helms, C.R. and Deal, B.E., (Plenum Press, New York, 1993), Chapter 1CrossRefGoogle Scholar
15 Lucovsky, G., Tsu, D.V., Rudder, R.A. and Markunas, R.J., in Thin Film Processes II, Ed. by Vossen, J.L. and Kern, W. (Academic Press, Boston, 1991), p. 565.Google Scholar
16 Bjorkman, C.H., Shearon, C.E. Jr., Ma, Yi, Yasuda, T., Lucovsky, G., Emmerichs, U., Meyer, C., Leo, K. and Kurz, H., J. Vac. Sci. Technol. A11, 964 (1993); C.H. Bjorkman, T. Yasuda, C.E. Shearon, Jr., G. Lucovsky, U. Emmerichs, C. Meyer, K. Leo and H. Kurz, J. Vac. Sci. Technol. B11, 1521 (1993).CrossRefGoogle Scholar
17 Nicollian, E.H. and Brews, J.R., in MOS Physics and Technology, (John Wiley and Son, New York, 1982).Google Scholar
18 Milnes, A.G., Semiconductor Devices and Integrated Electronics, (Van Nostrand Reinhold, New York, 1980), Chapter 7.CrossRefGoogle Scholar
19 Bhattacharyya, A. and Vorst, C., J. Electrochem. Soc. 132, 1900 (1985), and numberous references refd in Refs. 13 and 14.CrossRefGoogle Scholar
20 Hauser, J.R. and Wortman, J.J., unpublished results.Google Scholar
21 Ma, Y., Yasuda, T., Habermehl, S. and Lucovsky, G., J. Vac. Sci. Technol. B11, 1533 (1993).CrossRefGoogle Scholar
22 Ma, Y. and Lucovsky, G., Vac, J.. Sci. Technol. B12 (1994), submitted for publication.Google Scholar

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