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Control of GaAs Domain Formation Via Monolayer and Multilayer Steps on Misoriented Si(100)

Published online by Cambridge University Press:  28 February 2011

P.R. Pukite
Affiliation:
Department of Electrical Engineering University of Minnesota Minneapolis, MN 55455
P.I. Cohen
Affiliation:
Department of Electrical Engineering University of Minnesota Minneapolis, MN 55455
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Abstract

Reflection high energy electron diffraction (RHEED) measurements indicate that the adsorption of As on misoriented Si(100) surfaces drives a multilayer step transition. We find that the formation of multilayer steps is a strong function of substrate temperature and As pressure. Monolayer steps are metastable at low substrate temperature or As pressure. The subsequent nucleation and growth of GaAs by molecular beam epitaxy (MBE) is controlled by the initial Si step distribution. Single domain GaAs grown on the monolayer stepped substrate has Ga terminated steps. Conversely, single domain GaAs grown on the multilayer stepped substrate has As terminated steps.

Type
Research Article
Copyright
Copyright © Materials Research Society 1987

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References

[1] Fischer, R., Morkoc, H., Neumann, D.A., Zabel, H., Choi, C., Otsuka, N., Longerbone, M. and Erickson, L.P., J.Appl.Phys. 60, 1640 (1986).CrossRefGoogle Scholar
[2] Kroemer, H., in Proc.Mater.Res.Soc. 67, ed. by Fan, J.C.C. and Poate, J.M. (Materials Research Society, Pittsburgh, PA, 1986), p.3.Google Scholar
[3] Biegelsen, D.K., Ponce, F.A., Smith, A.J. and Tramontana, J.C., J.Appl.Phys. 61, 1856 (1987).CrossRefGoogle Scholar
[4] Kaplan, R., Surface Science 93, 145 (1980).CrossRefGoogle Scholar
[5] Bringans, R.D., Uhrberg, R.I.G., Olmstead, M.A. and Bachrach, R.Z., Phys.Rev. B 34, 7447 (1986).CrossRefGoogle Scholar
[6] Sakamoto, T. and Hashiguchi, G., Jap.J.Appl.Phys. 25, L78 (1986).CrossRefGoogle Scholar
[7] Kawabe, M. and Ueda, T., Jpn.J.Appl.Phys., 25, L285 (1986).CrossRefGoogle Scholar
[8] Wang, W.I., Appl.Phys.Lett., 44, 1149 (1984).CrossRefGoogle Scholar
[9] Koch, S.M., Rosner, S.J., Hull, R., Yoffe, G.W. and Harris, J.S. Jr., J.Crystal Growth 81, 205 (1987).CrossRefGoogle Scholar
[10] Nishi, S., Inomata, H., Akiyama, M. and Kaminishi, K., Jpn.J.Appl.Phys. 24, L391 (1985).CrossRefGoogle Scholar
[11] Tsaur, B.-Y. and Metze, G.M., Appl.Phys.Lett. 45, 535 (1984).CrossRefGoogle Scholar
[12] Ishizaka, A. and Shiraki, Y., J.Electrochem.Soc. 133, 666 (1986).CrossRefGoogle Scholar
[13] Lewis, B.F., Fernandez, R., Madhukar, A. and Grunthaner, F.J., J.Vac.SciTechnol. B4, 560 (1986).CrossRefGoogle Scholar
[14] Cohen, P.I., Pukite, P.R., Van Hove, J.M. and Lent, C.S., J.Vac.Sci.Technol. A4, 1251 (1986).CrossRefGoogle Scholar
[15] Pukite, P.R., Van Hove, J.M. and Cohen, P.I., J.Vac.Sci.Technol. B2, 243 (1984);CrossRefGoogle Scholar
Appl.Phys.Lett. 44, 456 (1984).CrossRefGoogle Scholar
[16] Pukite, P.R. and Cohen, P.I., J.Crystal Growth, 81, 214 (1987).CrossRefGoogle Scholar
[17] Martin, J.A., Aumann, C.E., Savage, D.E., Tringides, M.C., Lagally, M.G., Moritz, W. and Kretschmer, F., to be published in J.Vac.Sci.Technol.Google Scholar
[18] Somorjai, G.A., Chemistry in Two Dimensions: Surfaces (Cornell University Press, Ithaca, 1981).Google Scholar

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Control of GaAs Domain Formation Via Monolayer and Multilayer Steps on Misoriented Si(100)
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