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Contact hole shrink and multiplication by directed self-assembly of block copolymers: from material to integration

Published online by Cambridge University Press:  16 March 2015

Raluca Tiron ,
Xavier Chevalier ,
Ahmed Gharbi ,
Maxime Argoud ,
Patricia Pimenta-Barros ,
Mireille Maret ,
Patrice Gergaud ,
Tanguy Terlier ,
Jean-Paul Barnes  and
Christophe Navarro
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Raluca Tiron
Affiliation:
LETI, Grenoble, France.
Xavier Chevalier
Affiliation:
ARKEMA, Lacq, France.
Ahmed Gharbi
Affiliation:
LETI, Grenoble, France.
Maxime Argoud
Affiliation:
LETI, Grenoble, France.
Patricia Pimenta-Barros
Affiliation:
LETI, Grenoble, France.
Mireille Maret
Affiliation:
SIMAP, CNRS Grenoble, France
Patrice Gergaud
Affiliation:
LETI, Grenoble, France.
Tanguy Terlier
Affiliation:
LETI, Grenoble, France.
Jean-Paul Barnes
Affiliation:
LETI, Grenoble, France.
Christophe Navarro
Affiliation:
ARKEMA, Lacq, France.
Guillaume Fleury
Affiliation:
ENSCPB, Bordeaux, France.
Georges Hadziioannou
Affiliation:
ENSCPB, Bordeaux, France.
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Abstract

Density multiplication of patterned templates by directed self-assembly (DSA) of block copolymers (BCP) stands out as a promising alternative to overcome the limitation of conventional lithography. Using the 300mm pilot line available in LETI and Arkema’s materials, the main objective is to integrate DSA directly into the conventional CMOS lithography process in order to achieve high resolution and pattern density multiplication at a low cost. Thus we investigate the potential of DSA to address contact and via level patterning by performing either CD shrink or contact multiplication. Our approach is based on the graphoepitaxy of PS-b-PMMA block copolymers. Lithographic performances of block copolymers are evaluated both for contact shrink and contact doubling. Furthermore, advanced characterization technics are used to monitor in-film self-assembly process. These results show that DSA has a high potential to be integrated directly into the conventional CMOS lithography process in order to achieve high resolution contact holes.

Keywords

lithography (removal)self-assemblynanostructure
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1750: Symposium KK – Directed Self-Assembly for Nanopatterning , 2015 , mrsf14-1750-kk04-03
Copyright
Copyright © Materials Research Society 2015 

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References

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