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Contact Free Defect Investigation in as grown Fe-doped SI-InP

Published online by Cambridge University Press:  01 February 2011


Sabrina Hahn
Affiliation:
Institut für Experimentelle Physik, TU Bergakademie Freiberg, Silbermannstr. 1, D-09596 Freiberg, Germany
Kay Dornich
Affiliation:
Institut für Experimentelle Physik, TU Bergakademie Freiberg, Silbermannstr. 1, D-09596 Freiberg, Germany
Torsten Hahn
Affiliation:
Institut für Experimentelle Physik, TU Bergakademie Freiberg, Silbermannstr. 1, D-09596 Freiberg, Germany
Bianca Gründig-Wendrock
Affiliation:
Institut für Experimentelle Physik, TU Bergakademie Freiberg, Silbermannstr. 1, D-09596 Freiberg, Germany
Jürgen R. Niklas
Affiliation:
Institut für Experimentelle Physik, TU Bergakademie Freiberg, Silbermannstr. 1, D-09596 Freiberg, Germany
Peter Schwesig
Affiliation:
Crystal Growth Laboratory, University Erlangen-Nürnberg, Martensstr. 7, D-91058 Erlangen, Germany
Georg Müller
Affiliation:
Crystal Growth Laboratory, University Erlangen-Nürnberg, Martensstr. 7, D-91058 Erlangen, Germany

Abstract

The methods of microwave-detected photo-induced current transient spectroscopy (MD-PICTS) and microwave-detected photoconductivity (MDP), which proved themselves as very successful for defect investigations in GaAs wafers, were applied to Fe-doped SI-InP samples. It was possible to observe characteristic defect levels. One important defect center showed a similar behavior as the well known EL2 defect in GaAs. This defect exhibits positive and negative PICTS signals depending on the Fe concentration. The associated activation energies show that these signals can be interpreted as an interaction of the Fe2+/3+ level in InP with both, the valence and the conduction band.

Beside this major defect we discovered a wide range of shallow defects which may be important for material properties.

This result and successful microwave detected photoconductivity mappings of InP wafers show that the new non-destructive investigation methods provide valuable information on defect distribution and characteristics.


Type
Research Article
Copyright
Copyright © Materials Research Society 2005

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