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The Constrained Growth and Patterned Distribution of nc-Si from a-SiNx/a-Si:H/a-SiNx: Mechanism and Experiments

Published online by Cambridge University Press:  01 February 2011

K. J. Chen
Affiliation:
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, P. R. China
K. Chen
Affiliation:
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, P. R. China
L. C. Wu
Affiliation:
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, P. R. China
Z. Y. Ma
Affiliation:
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, P. R. China
P. G. Han
Affiliation:
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, P. R. China
W Li
Affiliation:
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, P. R. China
L Zhang
Affiliation:
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, P. R. China
Y. J. Zhang
Affiliation:
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, P. R. China
X. F. Huang
Affiliation:
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, P. R. China
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Abstract

We get size-controlled nanocrystalline silicon (nc-Si) from a-SiNx/a-Si:H/a-SiNx sandwich structures by thermal annealing. Transmission electron microscope analyses show that the mean size and the grain size distribution (GSD) of the nc-Si are controlled by the annealing conditions and the a-Si sublayer thickness. We build a theoretical model of constrained crystallization which can well interpret the phenomena of the growth halt of nc-Si and higher crystallization temperature for the thinner a-Si sublayer. The experimental results indicate that constrained crystallization method is promising to achieve uniform and high density nc-Si array either by thermal annealing or by laser annealing. Based on this investigation we employ the method of laser interference crystallization (LIC) to fabricate nanocrystal Si with the two-dimensional (2D) patterned distribution within 10 nm thick a-Si:H single layer. Si nano-crystallites are selectively located in the discal regions within the initial a-Si:H layer. The present method is promising to fabricate various patterned nc-Si arrays for device applications simply by changing the geometry of the mask.

Type
Research Article
Copyright
Copyright © Materials Research Society 2005

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References

1. Tsybeskov, L.. Computational Nanoscience and Nanotechnology 1, 304 (2002)Google Scholar
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