Skip to main content Accessibility help
×
Home
Hostname: page-component-559fc8cf4f-dxfhg Total loading time: 0.415 Render date: 2021-03-06T15:39:29.486Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "metricsAbstractViews": false, "figures": false, "newCiteModal": false, "newCitedByModal": true }

Comparative Study of Emission from Highly Excited (In, Al) GaN Thin Films and Heterostructures

Published online by Cambridge University Press:  10 February 2011

B. D. Little
Affiliation:
Center for Laser and Photonics Research and Department of Physics, Oklahoma State University, Stillwater, OK 74078
S. Bidnyk
Affiliation:
Center for Laser and Photonics Research and Department of Physics, Oklahoma State University, Stillwater, OK 74078
T. J. Schmidt
Affiliation:
Center for Laser and Photonics Research and Department of Physics, Oklahoma State University, Stillwater, OK 74078
J. B. Lam
Affiliation:
Center for Laser and Photonics Research and Department of Physics, Oklahoma State University, Stillwater, OK 74078
Y. H. Kwon
Affiliation:
Center for Laser and Photonics Research and Department of Physics, Oklahoma State University, Stillwater, OK 74078
J. J. Song
Affiliation:
Center for Laser and Photonics Research and Department of Physics, Oklahoma State University, Stillwater, OK 74078
S. Keller
Affiliation:
Computer Engineering and Materials Departments, University of California, Santa Barbara, CA 93106
U. K. Mishra
Affiliation:
Computer Engineering and Materials Departments, University of California, Santa Barbara, CA 93106
S. P. DenBaars
Affiliation:
Computer Engineering and Materials Departments, University of California, Santa Barbara, CA 93106
W. Yang
Affiliation:
Honeywell Technology Center, Plymouth, MN 55441
Get access

Abstract

The optical properties of (In, Al) GaN thin films and heterostructures have been compared under the conditions of strong nanosecond excitation. The stimulated emission (SE) threshold from AIGaN epilayers was found to increase with increasing Al content compared to GaN, in contrast to InGaN epilayers, where an order of magnitude decrease is observed. Optically pumped SE has been observed from AIGaN films with aluminum concentrations as high as 26%. Room temperature SE at wavelengths as low as 327 nm has been achieved. In contrast to the increase of SE threshold seen for AlGaN films, we found that AlGaN/GaN heterostructures which utilize carrier confinement and optical waveguiding drastically enhance the lasing characteristics. We demonstrate that AIGaN/GaN heterostructures are suitable for the development of deep ultraviolet laser diodes.

Type
Research Article
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below.

References

1. Nakamura, S. and Fasol, G., The Blue Laser Diode, (Springer, Berlin, 1997).10.1007/978-3-662-03462-0CrossRefGoogle Scholar
2. Akasaki, I., Sota, S., Sakai, H., Tanaka, T., Koike, M., and Amano, H., Electron. Lett. 32, 1105(1996).10.1049/el:19960743CrossRefGoogle Scholar
3. Schmidt, T. J., Cho, Yong-Hoon, Song, J. J., and Yang, Wei, Appl. Phys. Lett. 74, 245(1999).10.1063/1.123269CrossRefGoogle Scholar
4. Keller, S., Abare, A. C., Minsky, M. S., Wu, X. H., Mack, M. P., Speck, J. S., Hu, E., Coldren, L. A., Mishra, U. K., and DenBaars, S. P., Mater. Sci. Forum 264268, 1157 (1998).Google Scholar
5. Bidnyk, S., Schmidt, T. J., Park, G. H., and Song, J. J., Appl. Phys. Lett. 71, 729(1997).10.1063/1.119627CrossRefGoogle Scholar
6. Yang, X. H., Schmidt, T. J., Shan, W., Song, J. J., and Goldenberg, B., Appl. Phys. Lett. 66, 1 (1995).10.1063/1.114222CrossRefGoogle Scholar
7. Bidnyk, S., Schmidt, T. J., Little, B. D., and Song, J. J., Appl. Phys. Lett. 74, 1 (1999).10.1063/1.123114CrossRefGoogle Scholar
8. Cho, Yong-Hoon, Schmidt, T. J, Bidnyk, S., Song, J. J., Keller, S., Mishra, U. K., and DenBaars, S. P., Proc. MRS Fall G6.54, 161, Boston (1998).Google Scholar
9. Bidnyk, S., Schmidt, T. J., Cho, Y. H., Gainer, G. H., Song, J. J., Keller, S., Mishra, U. K., and DenBaars, S. P., Appl. Phys. Lett. 72, 1623(1998).10.1063/1.121133CrossRefGoogle Scholar
10. Song, J. J., Fischer, A. J., Schmidt, T. J., Bidnyk, S., and Shan, W., Nonlinear Optics 18 (2–1), 269 (1997).Google Scholar

Full text views

Full text views reflects PDF downloads, PDFs sent to Google Drive, Dropbox and Kindle and HTML full text views.

Total number of HTML views: 0
Total number of PDF views: 2 *
View data table for this chart

* Views captured on Cambridge Core between September 2016 - 6th March 2021. This data will be updated every 24 hours.

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Comparative Study of Emission from Highly Excited (In, Al) GaN Thin Films and Heterostructures
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

Comparative Study of Emission from Highly Excited (In, Al) GaN Thin Films and Heterostructures
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

Comparative Study of Emission from Highly Excited (In, Al) GaN Thin Films and Heterostructures
Available formats
×
×

Reply to: Submit a response


Your details


Conflicting interests

Do you have any conflicting interests? *