Skip to main content Accessibility help
×
Home
Hostname: page-component-77ffc5d9c7-866w8 Total loading time: 0.741 Render date: 2021-04-22T17:27:11.218Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "metricsAbstractViews": false, "figures": false, "newCiteModal": false, "newCitedByModal": true }

Comparative Analysis of MBE-grown GaN Films on SiC, ZnO and LiGaO2 Substrates

Published online by Cambridge University Press:  01 February 2011

F. Yun
Affiliation:
Virginia Commonwealth University, Dept. of Electrical Engineering, Richmond, VA23284
M. A. Reshchikov
Affiliation:
Virginia Commonwealth University, Dept. of Electrical Engineering, Richmond, VA23284
L. He
Affiliation:
Virginia Commonwealth University, Dept. of Electrical Engineering, Richmond, VA23284
T. King
Affiliation:
Virginia Commonwealth University, Dept. of Electrical Engineering, Richmond, VA23284
D. Huang
Affiliation:
Virginia Commonwealth University, Dept. of Electrical Engineering, Richmond, VA23284
H. Morkoç
Affiliation:
Virginia Commonwealth University, Dept. of Electrical Engineering, Richmond, VA23284
Jeff Nause
Affiliation:
Cermet, Inc., Atlanta GA 30318
Gene Cantwell
Affiliation:
Eagle Picher Technologies, LLC., Maimi, OK 74354
H. Paul Maruska
Affiliation:
CPI Crystal Photonics, Inc., Sanford, FL 32773
C. W. Litton
Affiliation:
Air Force Research Laboratory (AFRL/MLPS), Wright Patterson AFB, OH 45433
Get access

Abstract

We report the growth of GaN films by RF-MBE on SiC, ZnO, and LiGaO2 substrates, without buffer layers. Structural and optical properties of the films were probed by AFM for surface morphology, XRD for crystalline structure, and PL for optical properties. The dependence of GaN layer quality on the substrates and their surface pre-treatment prior to growth was studied within a similar MBE growth parameter matrix for all samples.

Type
Research Article
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below.

References

1 Strite, S.T. and Morkoç, H., J. Vac. Sci. & Technol., B10, 1237, (1992)CrossRefGoogle Scholar
2 Morkoç, H., “Nitride Semiconductors and Devices”, Springer Verlag 1999. ISSN 0933-033x, ISBN 3-540-64038.CrossRefGoogle Scholar
3 Nam, O.H., Bremser, M.D., Zheleva, T.S., and Davis, R.F., Appl. Phys. Lett., 71, 2638, (1997)CrossRefGoogle Scholar
4 Pearton, S. J., Zolper, J. C., Shul, R. J., and Ren, F., J. Appl. Phys., 86, 1, (1999)CrossRefGoogle Scholar
5 Fini, P., Zhao, L., Moran, B., Hansen, M., Marchand, H., Ibbetson, J. P., DenBaars, S. P., Mishra, U. K., and Speck, J. S., Appl. Phys. Lett. 75, 1706, (1999)CrossRefGoogle Scholar
6 Hamdani, F., Yeadon, M., Smith, David J., Tang, H., Kim, W., Salvador, A., Botchkarev, A. E., Polyakov, J. M., Skowronski, M., and MorkoΔ, H., J. Appl. Phys. 83, 983, (1998)CrossRefGoogle Scholar
7 Morkoç, H., in “Wide Energy Bandgap Electronics” Eds. Pearton, S. and Ren, F., World Scientific, in press.Google Scholar
8 Ishii, T., Tazoh, Y. and Miyazawa, S., Jpn. J. Appl. Phys. 36, part 2, L139(1997).CrossRefGoogle Scholar
9 Doolittle, W. A., Kang, S., and Brown, A., Solid-State Electronics 44, 229, (2000)CrossRefGoogle Scholar
10 Powell, J. A., Larkin, D. J., Neudeck, P. G., Yang, J. W. and Pirouz, P., in Silicon Carbide and Related Materials, Spencer, M. G., Devaty, R. P., Edmond, J. A. et al. Bristol, IOP Publishing: 161164, (1994).Google Scholar
11 Lee, C. D., Ramachandran, V., Sagar, A., Feenstra, R. M., Greve, D. W., Sarney, W. L., Salamanca-Riba, L., Look, D. C., Bai, Song, Choyke, W. J., Devaty, R. P., TMS; IEEE. Journal of Electronic Materials, 30, 162, (2001)CrossRefGoogle Scholar
12 Ruterana, P., Vermaut, Philippe, Nouet, G., Salvador, A., and Morkoç, H., MRS Internet Journal of Nitride Semicond. Res. 2, 42, (1997)CrossRefGoogle Scholar
13 Kung, P., Saxler, A., Zhang, X., Walker, D., Lavao, R., and Razeghi, M., Appl. Phys. Lett. 69, 2116, (1996)CrossRefGoogle Scholar
14 Tazoh, Y., Ishii, T., and Miyazawa, S., Jpn. J. Appl. Phys. 36, Part 2, L746(1997).CrossRefGoogle Scholar

Full text views

Full text views reflects PDF downloads, PDFs sent to Google Drive, Dropbox and Kindle and HTML full text views.

Total number of HTML views: 0
Total number of PDF views: 8 *
View data table for this chart

* Views captured on Cambridge Core between September 2016 - 22nd April 2021. This data will be updated every 24 hours.

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Comparative Analysis of MBE-grown GaN Films on SiC, ZnO and LiGaO2 Substrates
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

Comparative Analysis of MBE-grown GaN Films on SiC, ZnO and LiGaO2 Substrates
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

Comparative Analysis of MBE-grown GaN Films on SiC, ZnO and LiGaO2 Substrates
Available formats
×
×

Reply to: Submit a response


Your details


Conflicting interests

Do you have any conflicting interests? *