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Combined Tem and X-Ray Topographic Characterization of InxGa1−xAs/GaAs Strained Layer Systems.

Published online by Cambridge University Press:  26 February 2011

Michael Dudley
Affiliation:
Dept. of Materials Science & Engineering,, SUNY at Stony Brook,, NY 11794;
Gong-Da Yao
Affiliation:
Dept. of Materials Science & Engineering,, SUNY at Stony Brook,, NY 11794;
David Paine
Affiliation:
Brown U., Div. of Eng., Providence, RI 02912.
David Howard
Affiliation:
Brown U., Div. of Eng., Providence, RI 02912.
Robert N. Sacks
Affiliation:
United Technologies Research Center, East Hartford, CT.
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Abstract

Novel application of a combination of TEM and non-destructive synchrotron X-ray topography in both Bragg and grazing Bragg-Laue geometries to the characterization of InxGa1−xAs/GaAs strained layer films is reported. Specialized epilayer lift-off procedures enabled TEM characterization of the defect distributions in macroscopic area films, effectively increasing the field of view of the technique by several orders of magnitude. These lateral distributions correlated well with those observed on both Bragg and grazing Bragg- Laue topographs. Grazing Bragg-Laue images also afforded depth sensitivity. Excellent correlations exist between results obtained with all these techniques for systems with a wide range of In concentrations, corresponding to a broad range of interfacial dislocation densities, although only results for x=;0.085 are presented. This work demonstrates that it is possible to bridge the gap that has traditionally existed between the areas of application of these two generic techniques, in terms of both tolerable defect densities and fields of view. This gap also spans the range of defect densities which is of interest in this and other systems.

Type
Research Article
Copyright
Copyright © Materials Research Society 1991

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References

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